Recovery kinetics of the GaAs(001) surface in molecular beam epitaxy studied by in situ X-ray diffraction

Kaganer VM; Braun W; Jenichen B; Ploog KH

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Recovery kinetics of the GaAs(001) surface in molecular beam epitaxy studied by in situ X-ray diffraction

机译：原位X射线衍射研究分子束外延中GaAs（001）表面的恢复动力学

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Grazing incidence X-ray diffraction is used to study the GaAs(001) surface kinetics after a fractional number of monolayers is deposited by molecular beam epitaxy. We compare submonolayer depositions with the growth of non-integer number of layers. The coarsening exponent n of the mean 2D island size, l(t) similar to t(n), is found to be n = 0.93 +/- 0.18. This exponent is notably larger than the Lifsbitz-Slyozov exponent n = 1/3 expected for Ostwald ripening. A possible origin of this difference is discussed. (C) 2004 Elsevier B.V.. All rights reserved.

机译：掠入射X射线衍射用于研究通过分子束外延沉积一定数量的单层膜后的GaAs（001）表面动力学。我们将亚单层沉积与非整数层的生长进行了比较。平均2D岛大小的粗化指数n（t）与t（n）相似，为n = 0.93 +/- 0.18。该指数明显大于预期的奥斯特瓦尔德成熟的Lifsbitz-Slyozov指数n = 1/3。讨论了这种差异的可能来源。（C）2004 Elsevier B.V.。保留所有权利。

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《Physica, B. Condensed Matter》 |2005年第2期|共5页
作者
Kaganer VM; Braun W; Jenichen B; Ploog KH;
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正文语种 eng
中图分类物理学;
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synchrotron X-ray diffraction; molecular beam epitaxy; growth; BY-LAYER GROWTH; STEPPED SURFACES; CRYSTAL-GROWTH; ATOMIC-SCALE; SCATTERING; MORPHOLOGY; AG(100); SI(001); AG;

机译：同步加速器X射线衍射;分子束外延;生长;逐层生长;短切表面;晶体生长;原子尺度;散射;形态学;AG（100）;SI（001）;AG;

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专利

1. Recovery kinetics of the GaAs(001) surface in molecular beam epitaxy studied by in situ X-ray diffraction [J] . Kaganer VM, Braun W, Jenichen B, Physica, B. Condensed Matter . 2005,第1a2期

机译：原位X射线衍射研究分子束外延中GaAs（001）表面的恢复动力学
2. X-ray diffraction study on GaAs(001)-2 x 4 surfaces under molecular-beam epitaxy conditions [J] . Takahasi M, Yoneda Y, Mizuki J Applied Surface Science . 2004,第1a4期

机译：GaAs（001）-2 x 4表面在分子束外延条件下的X射线衍射研究
3. Surface dynamics of III-V semiconductors studied by in situ X-ray diffraction during molecular beam epitaxy [J] . Braun W, Kaganer VM, Jenichen B, Zeitschrift fur Kristallographie: International Journal for Structural, Physical, and Chemical Aspects of Crystalline Materials . 2005,第2a3期

机译：通过分子束外延过程中的原位X射线衍射研究III-V半导体的表面动力学
4. X-ray diffraction simulation of strained InGaAs/AlGaAs multiple quantum wells grown by molecular beam epitaxy [C] . D. Zhou, B. F. Usher Conference on Optoelectronic and Microelectronic Materials and Devices . 2000

机译：分子束外延生长应变IngaAs / Algaas多量子阱的X射线衍射模拟
5. Phosphorus incorporation during silicon(001):phosphorus gas-source molecular beam epitaxy: Effects on film growth kinetics, surface morphology, and the self-organization of germanium quantum dot overlays. [D] . Cho, Benjamin. 2007

机译：硅（001）：磷气源分子束外延过程中的磷掺入：对薄膜生长动力学，表面形态和锗量子点覆盖层的自组织的影响。
6. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

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7. Growth of self-catalyzed GaAs nanowires using molecular-beam-epitaxy and structural characterization by in-situ X-ray diffraction [O] . Schroth Philipp 2016

机译：利用分子束外延生长自催化GaAs纳米线及其原位X射线衍射结构表征

Recovery kinetics of the GaAs(001) surface in molecular beam epitaxy studied by in situ X-ray diffraction

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