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首页> 外文期刊>Journal of Crystal Growth >Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diodes grown by metalorganic chemical vapor deposition
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Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diodes grown by metalorganic chemical vapor deposition

机译：通过金属有机化学气相沉积法生长的基于InAlGaN的第四季多量子阱用于紫外发光二极管

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摘要

High-quality InAlGaN alloys, quantum wells and associated light emitting diodes have been grown by metalorganic chemical vapor deposition to produce emitters that operate in the ultraviolet (280―400 nm). In situ reflection and ex situ atomic force microscopy measurements show that InAlGaN epilayers and structures have good surface morphology. InAlGaN epilayers have also a narrow (0 0 0 6) reflection X-ray diffraction rocking curve line width of ～ 340 arcsec and a strong band edge photoluminescence (PL) emission peak from 320 to 355 nm at room temperature. Several X-ray satellite peaks were observed from InAlGaN-based quantum well structures, revealing that they were periodic with good interfaces. PL mapping measurements of the quantum well structures show excellent wavelength uniformity over a 2″ wafer with a standard deviation of ～ 0.4% for structures emitting from 353―372 nm. Ultraviolet light emitting diodes based on the same InAlGaN quantum well structures have an electroluminescence emission at ～375nm with a line width of ～ 10nm and an excellent wavelength uniformity of less than 1 nm across a 2″ wafer.
机译：高质量的InAlGaN合金，量子阱和相关的发光二极管已经通过有机金属化学气相沉积法生长，产生了可在紫外线（280-400 nm）下工作的发射极。原位反射和异位原子力显微镜测量显示InAlGaN外延层和结构具有良好的表面形态。 InAlGaN外延层在室温下还具有约340 arcsec的窄（0 0 0 6）反射X射线衍射摇摆曲线线宽和从320 nm至355 nm的强能带边缘光致发光（PL）发射峰。从基于InAlGaN的量子阱结构中观察到几个X射线卫星峰，表明它们具有良好的界面周期性。量子阱结构的PL映射测量显示在2英寸晶圆上具有出色的波长均匀性，对于从353-372 nm发射的结构，标准偏差为〜0.4％。基于相同InAlGaN量子阱结构的紫外线发光二极管在〜375nm处具有电致发光发射，其线宽为〜10nm，并且在2英寸晶圆上的波长均匀性小于1 nm。

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