Epitaxial growth of high-quality InN films on sapphire substrates by plasma-assisted molecular-beam epitaxy

Masataka Higashiwaki; Toshiaki Matsui

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Epitaxial growth of high-quality InN films on sapphire substrates by plasma-assisted molecular-beam epitaxy

机译：等离子体辅助分子束外延在蓝宝石衬底上外延生长高质量的InN薄膜

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摘要

Studying the epitaxial growth of InN films by plasma-assisted molecular-beam epitaxy, we found a buffer layer formed with a low-temperature-grown GaN (LT-GaN) and a low-temperature-grown InN (LT-InN) layers to be effective for improving their structural and electrical properties. Not only the growth temperature of a main part of InN film but growth temperatures and thicknesses of LT-GaN and LT-InN layers strongly influenced InN film properties. The surface of a 260-nm-thick InN film grown at the optimum condition was smooth with the surface root-mean-square roughness less than 4nm. Its Hall mobility and background electron density at room temperature were 1420cm~2/Vs and 1.4 x 10~(18)cm~(-3), respectively.

机译：通过等离子辅助分子束外延研究InN薄膜的外延生长，我们发现了由低温生长的GaN（LT-GaN）和低温生长的InN（LT-InN）层形成的缓冲层。有效改善其结构和电性能。不仅InN膜的主要部分的生长温度，而且LT-GaN和LT-InN层的生长温度和厚度强烈地影响InN膜的性能。在最佳条件下生长的260 nm厚的InN膜的表面光滑，表面均方根粗糙度小于4nm。室温下其霍尔迁移率和背景电子密度分别为1420cm〜2 / Vs和1.4 x 10〜（18）cm〜（-3）。

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来源
《Journal of Crystal Growth》 |2003年第3期|p.128-135|共8页
作者
Masataka Higashiwaki; Toshiaki Matsui;
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作者单位

Communications Research Laboratory, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. atomic force microscopy; A1. carrier density: A1. hall measurement; A1. mobility; A3. molecular beam epitaxy; B1. indium nitride;

机译：A1。原子力显微镜A1。载流子密度：A1。霍尔测量A1。流动性A3。分子束外延B1。氮化铟;

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专利

1. High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation [J] . Buzynin Yu. N., Vodopyanov A. V., Golubev S. V., Technical physics letters: Letters to the Russian journal of applied physics . 2015,第3期

机译：金属有机气相外延和等离子体辅助氮活化在f石和蓝宝石衬底上高速生长InN膜
2. Epitaxial growth of high-quality InN thin film on sapphire substrates by RF-MBE - effect of low-temperature-grown InN/GaN buffer layers [J] . Masataka Higashiwaki, Toshiaki Matsui 電子情報通信学会技術研究報告. レ-ザ·量子エレクトロニクス. Lasers and Quantum Electronics . 2002,第117期

机译：RF-MBE在蓝宝石衬底上外延生长高质量InN薄膜-低温生长的InN / GaN缓冲层的作用
3. Epitaxial growth of high-quality InN thin film on sapphire substrates by RF-MBE - effect of low-temperature-grown InN/GaN buffer layers [J] . Masataka Higashiwaki, Toshiaki Matsui 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2002,第114期

机译：RF-MBE在蓝宝石衬底上外延生长高质量InN薄膜-低温生长的InN / GaN缓冲层的作用
4. Visible emissions near 2.2 eV from InN films grown on Si (111) and sapphire (0001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy [C] . T. Yodo, H. Yona, Y. Harada, International conference on nitride semiconductors . 2003

机译：从SI（111）和蓝宝石（0001）基板上的INN 2.2eV附近的可见排放由电子回旋谐振等离子体辅助分子束外延
5. Growth of wurtzite gallium nitride epitaxial films on sapphire substrate by reactive molecular beam epitaxy and material characterization. [D] . Kim, Wook. 1998

机译：通过反应分子束外延和材料表征，在蓝宝石衬底上生长纤锌矿型氮化镓外延膜。
6. Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications [O] . Florian Bartoli, Jérémy Streque, Jaafar Ghanbaja, 2020

机译：SC0.09Al0.91N和SC0.18A10.82N的外延生长通过磁控溅射对表面声波应用的磁控溅射薄膜
7. Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates [O] . Zhang, X. Q, Yao, Z. G, Huang, S. H, 2006

机译：在蓝宝石衬底上通过等离子增强分子束外延生长的高质量ZnO薄膜中的内在激子跃迁

Epitaxial growth of high-quality InN films on sapphire substrates by plasma-assisted molecular-beam epitaxy

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