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首页> 外文期刊>Journal of Crystal Growth >On the growth of 4H―SiC by low-temperature liquid phase epitaxy in Al rich Al―Si melts
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On the growth of 4H―SiC by low-temperature liquid phase epitaxy in Al rich Al―Si melts

机译：富Al-Si熔体中低温液相外延生长4H-SiC的研究

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摘要

The growth of 4H―SiC by low-temperature liquid phase epitaxy was studied in Al-Si melts. The temperature ranged from 1000℃ to 1200℃, Some problems, which were sources of non-homogeneity of the growth or low reproducibility of the process, were identified and reviewed: (1) local delayed wetting of the seed by the melt, (2) morphological (3) presence of alumina particles on the liquid, (4) high reactivity of the melt with graphite at temperature above 1200℃, (5) formation of crystallites on the surface upon cooling. The solutions proposed to avoid or limit these problems are: (1) deposition of a Si layer before the growth, (2) careful backside gluing, (3) a two-step procedure involving the pre-dipping in the melt of a graphite rod on which alumina particles agglomerate, (4) growth at temperature lower than 1200℃. No solution was found to avoid the crystallites formation upon cooling.
机译：研究了Al-Si熔体中低温液相外延生长4H-SiC的过程。温度范围为1000℃至1200℃，确定并审查了一些问题，这些问题是生长过程的不均匀性或可重复性低的原因：（1）熔体对种子的局部延迟润湿，（2 ）形态（3）在液体上存在氧化铝颗粒；（4）在1200℃以上的温度下熔体与石墨的高反应性；（5）冷却后在表面上形成微晶。为避免或限制这些问题而提出的解决方案是：（1）在生长之前沉积硅层；（2）小心地背面胶粘；（3）两步法，包括预先浸入石墨棒的熔体中（4）在低于1200℃的温度下生长。找不到溶液可避免冷却时形成微晶。

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