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首页> 外文期刊>Journal of Crystal Growth >The Marangoni convection and the oxygen concentration in Czochralski-grown silicon
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The Marangoni convection and the oxygen concentration in Czochralski-grown silicon

机译:Czochralski生长的硅中的Marangoni对流和氧浓度

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摘要

The Marangoni convection on the silicon melt surface in Czochralski method was investigated. The results showed that Marangoni convection is related strongly to oxygen in silicon. Introducing a magnetic field by NdFeB permanent magnet into the melt, when B → B_0 (B_0, is the critical value), all the macro-convections were restrained in the melt and the Marangoni convection on the free surface emerges and becomes dominant. The oxygen concentration in silicon can be controlled freely by the Marangoni convection.
机译:用切克劳斯基方法研究了硅熔体表面的Marangoni对流。结果表明,Marangoni对流与硅中的氧密切相关。通过NdFeB永磁体向熔体中引入磁场,当B→B_0(临界值B_0)时,所有宏观对流都被限制在熔体中,自由表面上的Marangoni对流出现并占主导地位。硅中的氧浓度可通过Marangoni对流自由控制。

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