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首页> 外文期刊>Journal of Crystal Growth >Well-aligned carbon nanotube array grown on Si-based nanoscale SiO_2 islands
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Well-aligned carbon nanotube array grown on Si-based nanoscale SiO_2 islands

机译:在硅基纳米SiO_2岛上生长的取向良好的碳纳米管阵列

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摘要

Well-aligned carbon nanotube (CNT) array grown on Si-based nanoscale SiO_2 islands was obtained by microwave plasma-enhanced chemical vapor deposition under low temperature of 520℃. Atomic force microscope observation and Raman spectroscopic analysis disclosed the formation of the CNTs. The SiO_2 islands formed by excess anodization of Si-based Al film were found to be the growth points of the CNTs, which was confirmed by the C-V curves without charge characteristics. Position-controllable growth of CNTs was attempted on silicon substrate so as to explore significant applications in nanoelectronics and nanodevices.
机译:通过在520℃的低温下进行微波等离子体增强化学气相沉积,获得了在Si基纳米SiO_2岛上生长的取向良好的碳纳米管阵列。原子力显微镜观察和拉曼光谱分析揭示了碳纳米管的形成。发现通过过度阳极氧化Si基Al膜形成的SiO 2岛是CNT的生长点,这由没有电荷特性的C-V曲线证实。尝试在硅衬底上控制碳纳米管的位置生长,以探索在纳米电子学和纳米器件中的重要应用。

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