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首页> 外文期刊>Journal of Crystal Growth >Low-temperature growth of aluminum nitride on sapphire substrates
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Low-temperature growth of aluminum nitride on sapphire substrates

机译:蓝宝石衬底上氮化铝的低温生长

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摘要

AlN films were grown on sapphire substrates by radio frequency (RF) magnetron sputtering in an ambient of argon and nitrogen, using a pure aluminum target. The dependence of growth properties on substrate temperature and nitrogen concentration was investigated. It was shown that c-axis preferred wurtzite A1N films can be obtained at growth temperature as low as 100℃ with nitrogen concentration range from 20% to 100%. The crystallinity of AlN was improved with decreasing nitrogen concentration at a substrate temperature of 100℃.
机译:使用纯铝靶,在氩气和氮气环境中,通过射频(RF)磁控溅射在蓝宝石衬底上生长AlN膜。研究了生长特性对底物温度和氮浓度的依赖性。结果表明,在低至100℃的生长温度下,氮浓度在20%至100%范围内均可得到c轴优选的纤锌矿型AlN薄膜。在100℃的衬底温度下,随着氮浓度的降低,AlN的结晶度得以提高。

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