Influence of lattice polarity on wurzite GaN{0001} decomposition as studied by in situ gravimetric monitoring method

Miho Mayumi; Fumitaka Satoh; Yoshinao Kumagai

首页> 外文期刊>Journal of Crystal Growth >Influence of lattice polarity on wurzite GaN{0001} decomposition as studied by in situ gravimetric monitoring method

【24h】

Influence of lattice polarity on wurzite GaN{0001} decomposition as studied by in situ gravimetric monitoring method

机译：原位重量监测法研究晶格极性对纤锌矿GaN {0001}分解的影响

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The influence of lattice polarity on wurzite GaN{0001} decomposition was investigated using an in situ gravimetric monitoring (GM) method with freestanding GaN(0001). At temperatures below about 820 deg C, the decomposition rate of GaN(0001) was faster than that of GaN(0001). On the other hand, the decomposition rate of GaN(0001) was faster than that of GaN(0001) at temperatures between about 850 deg C and 950 deg C. The relation between the decomposition rate and the H2 partial pressure (PH2) indicates that the rate-limiting reactions are N(surface)+ 1/2 H_2(g)-NH_3(g) at lower temperatures, but Ga(surface)+3/2 H_2(g)-- GaH(g) at higher temperatures.

机译：使用具有独立式GaN（0001）的原位重量监测（GM）方法研究了晶格极性对纤锌矿GaN {0001}分解的影响。在低于约820℃的温度下，GaN（0001）的分解速率比GaN（0001）的分解速率快。另一方面，在约850℃至950℃之间的温度下，GaN（0001）的分解速率比GaN（0001）快。分解速率与H2分压（PH2）之间的关系表明：限速反应在较低温度下为N（表面）+ 1/2 H_2（g）-NH_3（g），而在较高温度下为Ga（表面）+3/2 H_2（g）-GaH（g）。

著录项

来源
《Journal of Crystal Growth》 |2002年第2002期|p.1143-1147|共5页
作者
Miho Mayumi; Fumitaka Satoh; Yoshinao Kumagai;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Etching; A1. Surface processes; A3. Vapor phase epitaxy; B1. Nitrides;

机译：A1。蚀刻;A1。表面工艺;A3。气相外延;B1。氮化物;

相似文献

外文文献
中文文献
专利

1. In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face [J] . Kazuhiro Akiyama, Yasuhiro Ishii, Sohei Abe, Applied physics express . 2009,第10期

机译：6H-SiC（0001）Si面热分解和氢腐蚀速率的原位重力监测
2. In situ gravimetric monitoring of decomposition rate on the surface of (0001) c-plane sapphire for the high temperature growth of AlN [J] . K. Akiyama, T. Araki, H. Murakami, Physica Status Solidi. C, Conferences and critical reviews . 2007,第7期

机译：原位重量监测AlN高温生长的（0001）c面蓝宝石表面分解速率
3. Measuring local lattice polarity in AIN and GaN by high resolution Z-contrast imaging: The case of (0001) and (1100) GaN quantum dots [J] . Jean-Luc Rouviere, Catherine Bougerol, Benoit Amstatt, Applied Physicsletters . 2008,第20期

机译：通过高分辨率Z对比成像测量AIN和GaN中的局部晶格极性：（0001）和（1100）GaN量子点的情况
4. Control of wurzite GaN layer polarity on initial stages of growth during ammonia molecular beam epitaxy on (0001) Al/sub 2/O/sub 3/ substrate [C] . Preobrazhenskii, V.V., Semyagin, Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on . 2003

机译：（0001）Al / sub 2 / O / sub 3 /衬底上氨分子束外延生长期间纤锌矿GaN层极性的控制
5. In-situ, portable monitoring methods for photolithography characterization. [D] . Xue, Jing. 2009

机译：用于光刻表征的原位便携式监控方法。
6. The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study [O] . Andrian V. Kuchuk, Serhii Kryvyi, Petro M. Lytvyn, 2016

机译：在原始GaN（0001）衬底上生长的GaN / AlN超晶格中应变弛豫的特殊性：XRD和AFM的比较研究
7. Anomalous lattice deformation in GaN/SiC(0001) measured by high-speed in situ synchrotron X-ray diffraction [O] . Takuo Sasaki, Fumitaro Ishikawa, Masamitu Takahasi 2016

机译：通过高速原位同步X射线衍射测量的GaN / SiC（0001）中的异常晶格变形

Influence of lattice polarity on wurzite GaN{0001} decomposition as studied by in situ gravimetric monitoring method

摘要

著录项

相似文献

相关主题

期刊订阅