Fabrication of wurtzite quantum-well structures of CdSe/ZnCdSe by molecular beam epitaxy

Nobuo Matsumura; Kengo Yasui; Junji Saraie

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Fabrication of wurtzite quantum-well structures of CdSe/ZnCdSe by molecular beam epitaxy

机译：分子束外延法制备CdSe / ZnCdSe纤锌矿量子阱结构

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We successfully fabricated wurtzite quantum-well structures with Zn_0.4Cd_0.6Se barrier layers and a four monolayer CdSe well layer on cubic ZnSe/GaAs(111)B substrates by molecular beam epitaxy. Although the cubic CdSe well layer grew on the cubic ZnSe/GaAs(111)B substrate, the wurtzite CdSe well layer grew on the wurtzite-Zn_0.4Cd_0.6Se/cubic- ZnSe/GaAs(111)B structure. The CdSe well layer was compressed in the (0001) plane and dilated to the [0001] direction judging from the X-ray diffraction measurement. Weak orange photoluminescence was observed in this quantum-well structure.

机译：我们成功地通过分子束外延在立方ZnSe / GaAs（111）B衬底上制造了具有Zn_0.4Cd_0.6Se势垒层和四个单层CdSe阱层的纤锌矿量子阱结构。尽管立方CdSe阱层生长在立方ZnSe / GaAs（111）B衬底上，纤锌矿CdSe阱层却生长在纤锌矿-Zn_0.4Cd_0.6Se /立方-ZnSe / GaAs（111）B结构上。根据X射线衍射测量结果，将CdSe阱层在（0001）平面上压缩并向[0001]方向扩展。在该量子阱结构中观察到微弱的橙色光致发光。

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来源
《Journal of Crystal Growth》 |2002年第2002期|p.1536-1540|共5页
作者
Nobuo Matsumura; Kengo Yasui; Junji Saraie;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. Molecular beam epitaxy; A3. Quantum wells; B1. Cadmium compounds; B2. Semiconducting cadmium compounds;

机译：A3。分子束外延;A3。量子阱;B1。镉化合物;B2。半导体镉化合物;

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专利

1. Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy [J] . V I Kozlovskii, P A Trubenko, E M Dianov, Quantum electronics . 1998,第4期

机译：具有纵向电子束泵浦并基于通过分子束外延生长在ZnSe衬底上的量子阱ZnCdSe / ZnSe结构的半导体激光器
2. Semiconductor laser with longitudinal electron-beam pump and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy [J] . Kozlovskii V.I., Trubenko P.A., Dianov E.M. Квантовая электроника . 1998,第4期

机译：带有纵向电子束泵的半导体激光器，其基于通过分子束外延生长在ZnSe衬底上的量子阱ZnCdSe / ZnSe结构
3. CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy [J] . Gronin S. V., Sorokin S. V., Kazanov D. R., Acta Physica Polonica . 2014,第5期

机译：GaAs衬底上分子束外延生长的黄色光谱范围的CdSe / ZnCdSe量子点异质结构
4. Photoluminescence study of strain-compensated GaInNAs/GaAs/GaAs quantum-well structures grown by molecular-beam epitaxy [C] . Pavelescu, E.-M., Jouhti, . 2002

机译：分子束外延生长的应变补偿GaInNAs / GaAs / GaAs量子阱结构的光致发光研究
5. Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs. [D] . Chen, Tai-Chou Papo. 2008

机译：通过分子束外延和簇束外延发展III-氮化物半导体，以及基于氮化铟镓MQW的LED的制造。
6. Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy [O] . Kai Ding, Vitaliy Avrutin, Natalia Izioumskaia, 2018

机译：等离子体辅助分子束外延生长的Zn极性BeMgZnO / ZnO异质结构上肖特基二极管的制备
7. Role of Sb in the growth and optical properties of 1.55\u3bcmu m GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy [O] . Sun, H. D., Calvez, S., Dawson, M. D., 2005

机译：Sb在分子束外延生长1.55 \ u3bcmu m GaInN（Sb）As / GaNAs量子阱结构和光学性质中的作用
8. Using Molecular-Beam Epitaxy to Fabricate Quantum-Well Devices. [R] . Goodhue, W. D. 1989

机译：利用分子束外延制作量子阱器件。

Fabrication of wurtzite quantum-well structures of CdSe/ZnCdSe by molecular beam epitaxy

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