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Drive Current Enhancement in TFET by Dual Source Region

机译：通过双源极区域提高TFET中的驱动电流

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摘要

This paper presents tunneling field-effect transistor (TFET) with dual source regions. It explores the physics of drive current enhancement. The novel approach of dual source provides an effective technique for enhancing the drive current. It is found that this structure can offer four tunneling junctions by increasing a source region. Meanwhile, the dual source structure does not influence the excellent features of threshold slope (SS) of TFET. The number of the electrons and holes would be doubled by going through the tunneling junctions on the original basis. The overlap length of gate-source is also studied. The dependence of gate-drain capacitance C_(gd) and gate-source capacitance C_(gs) on gate-to-source voltage V_(gs) and drain-to-source voltage V_(ds) was further investigated. There are simulation setups and methodology used for the dual source TFET (DS-TFET) assessment, including delay time, total energy per operation, and energy-delay product. It is confirmed that the proposed TFET has strong potentials for VLSI.
机译：本文提出了具有双源极区的隧穿场效应晶体管（TFET）。它探讨了驱动电流增强的物理原理。双源的新颖方法为提高驱动电流提供了一种有效的技术。发现该结构可以通过增加源极区域来提供四个隧道结。同时，双源极结构不会影响TFET的阈值斜率（SS）的出色功能。通过在最初的基础上通过隧道结，电子和空穴的数量将增加一倍。还研究了栅极-源极的重叠长度。进一步研究了栅极-漏极电容C_（gd）和栅极-源极电容C_（gs）对栅极-源极电压V_（gs）和漏极-源极电压V_（ds）的依赖性。有用于双源TFET（DS-TFET）评估的仿真设置和方法，包括延迟时间，每次操作的总能量和能量延迟乘积。可以确定的是，提出的TFET具有很大的VLSI潜力。

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  • 来源
    《Journal of electrical and computer engineering》 |2015年第2015期|905718.1-905718.11|共11页
  • 作者

    Zhi Jiang; Yiqi Zhuang; Cong Li; Ping Wang; Yuqi Liu;

  • 作者单位

    School of Microelectronics, Xidian University, Xi'an 710071, China;

    School of Microelectronics, Xidian University, Xi'an 710071, China;

    School of Microelectronics, Xidian University, Xi'an 710071, China;

    School of Microelectronics, Xidian University, Xi'an 710071, China;

    School of Microelectronics, Xidian University, Xi'an 710071, China;

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