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首页> 外文期刊>Journal of Heat Transfer >Simulation of Electron-Phonon Coupling and Heating Dynamics in Suspended Monolayer Graphene Including All the Phonon Branches
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Simulation of Electron-Phonon Coupling and Heating Dynamics in Suspended Monolayer Graphene Including All the Phonon Branches

机译:包含所有声子支链的悬浮单层石墨烯中电子-声子耦合和加热动力学的模拟

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摘要

Thermal effects in monolayer graphene due to an electron flow are investigated with a direct simulation Monte Carlo (DSMC) analysis. The crystal heating is described by simulating the phonon dynamics of the several relevant branches, acoustic, optical, K and Z phonons. The contribution of each type of phonon is highlighted. In particular, it is shown that the Z phonons, although they do not enter the scattering with electrons, play a non-negligible role in the determination of the crystal temperature. The phonon distributions are evaluated by counting the emission and absorption processes during the MC simulation. The crystal temperature raise is obtained for several applied electric fields and for several positive Fermi energies. The latter produces the effect of a kind of n-doping in the graphene layer. Critical temperatures can be reached in a few tens of picoseconds posing remarkable issues regarding the cooling system in view of a possible application of graphene in semiconductor devices. Moreover, a significant influence of the lattice temperature on the characteristic curves is observed only for long times, confirming graphene rather robust as regards the electrical performance.
机译:通过直接模拟蒙特卡洛(DSMC)分析研究了单层石墨烯中由于电子流引起的热效应。通过模拟几个相关分支(声,光,K和Z声子)的声子动力学来描述晶体的加热。突出了每种声子的贡献。特别地,显示了Z声子,尽管它们不与电子一起进入散射,但是在确定晶体温度中起不可忽略的作用。通过计算MC模拟过程中的发射和吸收过程来评估声子分布。对于几个外加电场和几个费米正能量,晶体温度都会升高。后者在石墨烯层中产生一种n掺杂的效果。考虑到石墨烯在半导体器件中的可能应用,可以在几十皮秒内达到临界温度,这构成了有关冷却系统的显着问题。此外,仅长时间观察到晶格温度对特性曲线的显着影响,证实了石墨烯在电性能方面相当坚固。

著录项

  • 来源
    《Journal of Heat Transfer》 |2018年第9期|092404.1-092404.10|共10页
  • 作者

    Marco Coco; Vittorio Romano;

  • 作者单位

    Department of Mathematicsand Computer Science,Università degli Studi di Catania,viale Andrea Doria 6,Research Group GNFM at INDAM,Piazzale A. Moro 5;

    Department of Mathematicsand Computer Science,Università degli Studi di Catania,viale Andrea Doria 6,Research Group GNFM at INDAM,Piazzale A. Moro 5;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Temperature; Electrons; Phonons; Graphene; Simulation;

    机译:温度;电子;声子;石墨烯;模拟;

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