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Heat Transfer Inside the Physical Vapor Transport Reactor

机译：物理蒸气传输反应器内部的热传递

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摘要

The physical vapor transport (PVT) method is widely adopted to produce semiconductor materials including silicon carbide (SiC). This work focuses on the role of thermal radiation for the heat transfer inside the PVT reactor. The radiation is characterized by two dimensionless parameters relating to the SiC charge and to the growth chamber. A simulation program is set up with the finite-volume method (FVM), considering heat generation, conduction, and radiation under the steady-state condition. Comprehensive results are obtained by tuning values of dimensionless parameters and the associated controlling variables, such as the cooling temperature and the coil current density, and illustrated in the phase diagrams. From the study, we find that the charge size has negligible influence on the temperature field, the crucible conduction determines the temperature level, and the relative strength of the chamber radiation against the crucible conduction modifies the temperature field on the SiC ingot. Finally, design guidelines are proposed with the instructive phase diagram to achieve the optimized thermal performance of the PVT reactor.
机译：物理气相传输（PVT）方法被广泛采用来生产包括碳化硅（SiC）的半导体材料。这项工作集中于热辐射在PVT反应器内部传热的作用。辐射的特征在于与SiC电荷和生长室有关的两个无量纲参数。考虑到稳态条件下的热量产生，传导和辐射，使用有限体积方法（FVM）建立了一个仿真程序。通过调整无量纲参数的值和相关的控制变量（如冷却温度和线圈电流密度）可获得综合结果，并在相图中进行了说明。从研究中我们发现，装料量对温度场的影响可忽略不计，坩埚传导决定了温度水平，而腔室辐射对坩埚传导的相对强度改变了SiC铸锭上的温度场。最后，提出了具有指导性的相图的设计指南，以实现PVT反应器的优化热性能。

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  • 来源
    《Journal of Heat Transfer》 |2016年第10期|102002.1-102002.13|共13页
  • 作者

    Zeyi Zhang; Min Xu; Liqiu Wang;

  • 作者单位

    Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, HKU-Zhejiang Institute of Research and Innovation (HKU-ZIRI), Hangzhou, Zhejiang 311300, China;

    Energy Research Institute, Shandong Academy of Sciences, Jinan, Shandong 250014, China;

    Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, HKU-Zhejiang Institute of Research and Innovation (HKU-ZIRI), Hangzhou, Zhejiang 311300, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    thermal radiation; heat transfer; PVT method; SiC growth chamber;

    机译：热辐射传播热量;PVT法;SiC生长室;

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