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首页> 外文期刊>Journal of Heat Transfer >Cross-Plane Phonon Conduction in Polycrystalline Silicon Films
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Cross-Plane Phonon Conduction in Polycrystalline Silicon Films

机译：多晶硅膜中的跨平面声子传导

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摘要

Silicon films of submicrometer thickness play a central role in many advanced technologies for computation and energy conversion. Numerous thermal conductivity data for silicon films are available in the literature, but they are mainly for the lateral, or in-plane, direction for both polycrystalline and single crystalline films. Here, we use time-domain thermoreflectance (TDTR), transmission electron microscopy, and semiclassical phonon transport theory to investigate thermal conduction normal to polycrystalline silicon (polysilicon) films of thickness 79, 176, and 630 nm on a diamond substrate. The data agree with theoretical predictions accounting for the coupled effects of phonon scattering on film boundaries and defects related to grain boundaries. Using the data and the phonon transport model, we extract the normal, or cross-plane thermal conductivity of the polysilicon (11.3 ± 3.5, 14.2 ± 3.5, and 25.6 ± 5.8 W m~(-1) K~(-1) for the 79, 176, and 630 nm films, respectively), as well as the thermal boundary resistance between polysilicon and diamond (6.5-8 m~2 K GW~(-1)) at room temperature. The nonuniformity in the extracted thermal conductivities is due to spatially varying distributions of imperfections in the direction normal to the film associated with nucleation and coalescence of grains and their subsequent columnar growth.
机译：亚微米厚度的硅膜在许多用于计算和能量转换的先进技术中起着核心作用。硅膜的大量热导率数据可从文献中获得，但它们主要针对多晶和单晶膜的横向或平面方向。在这里，我们使用时域热反射（TDTR），透射电子显微镜和半经典声子输运理论来研究金刚石基板上厚度为79、176和630 nm的多晶硅膜的法向热传导。数据与理论预测相符，说明了声子散射对薄膜边界和与晶界有关的缺陷的耦合作用。使用数据和声子传输模型，我们提取多晶硅的法向或跨平面热导率（11.3±3.5、14.2±3.5和25.6±5.8 W m〜（-1）K〜（-1）分别为79、176和630 nm薄膜），以及室温下多晶硅和金刚石之间的热边界电阻（6.5-8 m〜2 K GW〜（-1））。所提取的热导率的不均匀性是由于缺陷在垂直于薄膜的方向上在空间上的分布变化而引起的，该缺陷与晶粒的成核和聚结以及随后的柱状生长有关。

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