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首页> 外文期刊>Journal of Heat Transfer >From the Casimir Limit to Phonemic Crystals: 20 Years of Phonon Transport Studies Using Silicon-on-lnsulator Technology
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From the Casimir Limit to Phonemic Crystals: 20 Years of Phonon Transport Studies Using Silicon-on-lnsulator Technology

机译:从卡西米尔极限到音素晶体:使用绝缘体上硅技术进行声子传输研究长达20年

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摘要

Silicon-on-insulator (SOI) technology has sparked advances in semiconductor and MEMs manufacturing and revolutionized our ability to study phonon transport phenomena by providing single-crystal silicon layers with thickness down to a few tens of nanometers. These nearly perfect crystalline silicon layers are an ideal platform for studying ballistic phonon transport and the coupling of boundary scattering with other mechanisms, including impurities and periodic pores. Early studies showed clear evidence of the size effect on thermal conduction due to phonon boundary scattering in films down to 20 nm thick and provided the first compelling room temperature evidence for the Casimir limit at room temperature. More recent studies on ultrathin films and periodically porous thin films are exploring the possibility of phonon dispersion modifications in confined geometries and porous films.
机译:绝缘体上硅(SOI)技术激发了半导体和MEM制造领域的进步,并通过提供厚度低至几十纳米的单晶硅层,彻底改变了我们研究声子传输现象的能力。这些几乎完美的晶体硅层是研究弹道声子传输以及边界散射与其他机制(包括杂质和周期性孔隙)的耦合的理想平台。早期研究表明,在厚度小于20 nm的薄膜中,由于声子边界散射而引起的尺寸效应对热传导的影响明显,并提供了第一个令人信服的室温证据,证明了室温下卡西米尔极限。关于超薄膜和周期性多孔薄膜的最新研究正在探索在有限的几何形状和多孔薄膜中进行声子分散改性的可能性。

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