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首页> 外文期刊>Journal of Imaging Science and Technology >Electron-Beam Scanning of ZnS Crystals: A Thermal Comparison of CRTs and Field-Emission Devices
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Electron-Beam Scanning of ZnS Crystals: A Thermal Comparison of CRTs and Field-Emission Devices

机译：ZnS晶体的电子束扫描：CRT和场发射器件的热比较

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The purpose of the present study is to examine the tradeoff between the high-intensity, short-duty-cycle excitation prevailing in a CRT versus the low-intensity, long-duty-cycle excitation in a field emission device, as it affects the luminescent efficiency of the phosphor. Thermal conduction models describing both situations are built, and the models are validated with first-order energy balance estimates. The temperature buildup is then calculated for representative cases of both technologies by running a numerical implementation of the models on a Silicon Graphics workstation using Mathematical. The results are related to published experimental values on phosphor self-quenching and thermal breakdown. It is seen that thermal buildup is considerably more pronounced for field-emission devices, which places an upper bound on the pixel parallelism advantage they can provide over more traditional single-spot displays such as CRTs.
机译：本研究的目的是检验在CRT中普遍存在的高强度，短周期激励与场发射器件中的低强度，长周期激励之间的权衡，因为它影响发光荧光粉的效率。建立了描述这两种情况的热传导模型，并用一阶能量平衡估计对模型进行了验证。然后，通过使用Mathematical在Silicon Graphics工作站上运行模型的数值实现，针对两种技术的典型情况计算温度累积。这些结果与已发表的有关荧光粉自猝灭和热击穿的实验值有关。可以看出，对于场发射器件而言，热积累要明显得多，这使它们比传统的单点显示器（如CRT）所提供的像素并行性优势更为可观。

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