首页> 外文期刊>Journal of Imaging Science and Technology >Calculated Properties of Sulfur Centers on AgCl Cubic Surfaces
【24h】

Calculated Properties of Sulfur Centers on AgCl Cubic Surfaces

机译:AgCl立方表面上硫中心的计算性质

获取原文
获取原文并翻译 | 示例
           

摘要

Calculations of various sulfur-containing centers adsorbed to sites on the AgCl surface are presented. A density functional method followed by a classical lattice ion relaxation is employed in this work. Several different centers such as Ag_4S_2 have energy levels positioned to trap holes, while Ag_3S+ and Ag_5S_2+ have levels positioned to trap electrons. It is found that a sulfide ion at a kink site that is compensated by interstitial silver ion undergoes relaxation in the presence of an electron leading to a trap depth of several tenths of an electronvolt. It appears that this may be an important step in chemical sensitization. These results are consistent with stepwise addition of electrons and silver ions resulting in latent image formation
机译:提出了各种吸附到AgCl表面位上的含硫中心的计算。在这项工作中采用了密度泛函方法,然后进行了经典的晶格离子弛豫。几个不同的中心(例如Ag_4S_2)的能级被俘获空穴,而Ag_3S +和Ag_5S_2 +的能级被俘获电子。已发现,在间隙的银离子补偿的纽结位处的硫化物离子在存在电子的情况下发生弛豫,从而导致陷阱深度达到电子伏特的十分之一。看来这可能是化学敏化的重要步骤。这些结果与逐步添加电子和银离子导致潜像形成相一致。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号