Laser endotaxy in silicon carbide and PIN diode fabrication

Z. Tian; N. R. Quick; A. Kar

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Laser endotaxy in silicon carbide and PIN diode fabrication

机译：碳化硅和PIN二极管制造中的激光内窥镜

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A laser solid phase diffusion technique has been utilized to fabricate endolayers in n-type 6H-SiC substrates by carbon incorporation. X-ray energy dispersive spectroscopic analysis shows that the thickness of the endolayer is about 100 nm. High resolutio

机译：激光固相扩散技术已被用于通过碳掺入在n型6H-SiC衬底中制造内层。 X射线能量色散光谱分析表明，内层的厚度约为100nm。高分辨率

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来源
《Journal of Laser Applications》 |2008年第2期|p.106-115|共10页
作者
Z. Tian; N. R. Quick; A. Kar;
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作者单位

Laser-Aided Manufacturing, Materials, and Microprocessing Laboratory, College of Optics and Photonics/ CREOL, University of Central Florida, Orlando, Florida 32816-2700;

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原文格式 PDF
正文语种 eng
中图分类光学;
关键词
silicon carbide; laser solid phase diffusion; endolayer; endotaxy; PIN diode;

机译：碳化硅;激光固相扩散;内膜;内吞;PIN二极管;

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专利

1. Characteristics of 6H-Silicon Carbide PIN Diodes Prototyping by Laser Doping [J] . Z.TIAN, N.R.QUICK, A.KAR Journal of Electronic Materials . 2005,第4期

机译：激光掺杂制备6H-碳化硅PIN二极管的特性
2. Laser-doping of silicon carbide for p-n junction and LED fabrication [J] . Sachin Bet, Nathaniel Quick, Aravinda Kar Physica Status Solidi. A, Applications and Materials Science . 2007,第4期

机译：激光掺杂碳化硅用于p-n结和LED制造
3. CHARACTERIZATION OF SILICON CARBIDE-SILICON NITRIDE COMPOSITE ULTRAFINE PARTICLES SYNTHESIZED USING A CO2 LASER BY SILICON-29 MAGIC ANGLE SPINNING NMR AND ESR [J] . Suzuki M., Aizawa M., Nakata Y., Journal of the American Ceramic Society . 1995,第1期

机译：利用CO2激光通过SILICON-29磁角自旋NMR和ESR表征碳化硅-氮化硅硅酸盐复合超细颗粒
4. Fabrication of Silicon Carbide PIN Diodes by Laser Doping and Planar Edge Termination by Laser Metallization [C] . Z. Tian, N.R. Quick, A. Kar Symposium Proceedings vol.864; Symposium on Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices; 20050328-0401; San Francisco,CA(US) . 2005

机译：激光掺杂制备碳化硅PIN二极管，激光金属化制备平面边缘终端
5. Laser metallization and doping for silicon carbide diode fabrication and endotaxy. [D] . Tian, Zhaoxu. 2006

机译：激光金属化和掺杂用于碳化硅二极管的制造和内插。
6. Erratum: Polozov I. et al. Fabrication of Silicon Carbide Fiber-Reinforced Silicon Carbide Matrix Composites Using Binder Jetting Additive Manufacturing from Irregularly-Shaped and Spherical Powders. Materials 2020 13 1766 [O] . Igor Polozov, Nikolay Razumov, Dmitriy Masaylo, 2020

机译：错误：PolozovI.等。碳化硅纤维增强碳化硅基质复合材料的制造使用粘合剂喷射添加剂制造不规则形状和球形粉末。材料2020131766
7. Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes [O] . Amit Sudhakar Kumta -1

机译：4H-SIC碳化硅肖特基势垒二极管制备工艺技术的研制
8. Investigation of Silicon Carbide (SiC) Gun-Electron-Induced-Semiconductor-Hybrid-Amplifier (GEISHA) Diode Feasibility and Fabrication [R] . Berman, H. S., Heng, T. M., Nathanson, H. C. 1972

机译：碳化硅（siC）枪 - 电子诱导半导体 - 混合放大器（GEIsHa）二极管可行性和制造的研究

Laser endotaxy in silicon carbide and PIN diode fabrication

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