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首页> 外文期刊>Journal of Materials Research >Effect of LPHT annealing on interface characteristics between HPHT lb diamond substrates and homoepitaxial CVD diamond layers
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Effect of LPHT annealing on interface characteristics between HPHT lb diamond substrates and homoepitaxial CVD diamond layers

机译：LPHT退火对HPHT 1b金刚石基底与同质外延CVD金刚石层之间界面特性的影响

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摘要

To study the interface characteristics between substrates and homoepitaxially grown single crystalline diamond layers, the high-pressure/high-temperature lb diamond seeds with homoepitaxial diamond layers were annealed by low-pressure/high-temperature treatment in a hydrogen environment. The stress evolution and related impurity transformation near the interface were characterized by Raman spectroscopy, photoluminescence, and micro-infrared spectroscopy before and after annealing. It is found that the stress is the smallest in a 100 μm wide zone near the interface, accompanying with the similar change in substitutional nitrogen (Ns) concentration. After annealing at 1050 ℃, 1250 ℃, and 1450 ℃, the local compressive stress is released gradually with temperature change. It is decreased by 1.03 GPa in maximum after annealing at 1450 ℃. The concentration of nitrogen-vacancy (NV) complexes in the chemical vapor deposition (CVD) layer is dramatically reduced at 1450 ℃. The value of I_(NV)-/I_(diamond) decreases much more than I_(NV)~0/I_(diamond) in the CVD layer, which is due to the lower stability of NV~- compared with NV~0 at high temperature.
机译：为了研究基底与同质外延生长的单晶金刚石层之间的界面特性，在氢气环境中通过低压/高温处理对具有同质外延金刚石层的高压/高温lb金刚石晶种进行退火。退火前后，通过拉曼光谱，光致发光和微红外光谱对界面附近的应力演化和相关杂质转化进行了表征。发现应力在界面附近的100μm宽的区域中最小，并且伴随着替代氮（Ns）浓度的类似变化。在1050℃，1250℃和1450℃退火后，局部压应力随温度变化而逐渐释放。 1450℃退火后最大降低1.03 GPa。在1450℃时，化学气相沉积（CVD）层中氮空位（NV）络合物的浓度显着降低。 CVD层中I_（NV）-/ I_（diamond）的值比I_（NV）〜0 / I_（diamond）的降低要大得多，这是由于NV_-的稳定性低于NV_0在高温。

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