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首页> 外文期刊>Journal of Materials Research >Optimized ALD-derived MgO coating layers enhancing silicon anode performance for lithium ion batteries
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Optimized ALD-derived MgO coating layers enhancing silicon anode performance for lithium ion batteries

机译：优化的ALD衍生的MgO涂层，增强锂离子电池的硅阳极性能

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摘要

In this work, atomic layer deposition (ALD), as a novel strategy, has been applied to deposit MgO on nano-sized porous Si (pSi) dendrites obtained by etching Al-Si alloy for LIBs. The reversible specific capacity of pSi@ MgO electrode is 969.4 mA h/g after 100 cycles at 100 mA/g between 0.01 and 1.5 V, and it presents the discharge specific capacities of 1253.0, 885.5, 642.4, 366.2, and 101.4 mA h/g at 100, 500, 1000, 2000, and 5000 mA/g, respectively. What is more, it delivers a high reversible capacity of 765.1 mA h/g even at 500 mA/g after 200 cycles. The performance improvement can be attributed to the protection of the MgO layer and built-in space of porous Si for volume expansion upon cycling. These results illustrate that ALD derived coating is a powerful strategy to enhance electrical properties of anode materials with huge volume change for lithium-ion batteries.
机译：在这项工作中，原子层沉积（ALD）作为一种新策略，已应用于通过蚀刻Al-Si合金的纳米尺寸的多孔Si（Psi）树枝状物沉积MgO。 PSI @ MgO电极的可逆比容量为969.4 mA H / g在100mA / g之间的100mA / g之间，呈现出1253.0,885.5,642.4,366.2和101.4 mA /的放电特定容量。 G在100,500,1000,2000和5000 mA / g处。更重要的是，即使在200次循环之后，它也能为765.1 mA H / g提供765.1 mA H / g的高可逆容量。性能改善可归因于保护MgO层和多孔Si的内置空间，用于在循环时膨胀。这些结果说明了ALD衍生的涂层是一种强大的策略，以提高阳极材料的电性能，锂离子电池的巨大变化。

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  • 来源
    《Journal of Materials Research》 |2019年第14期|2425-2434|共10页
  • 作者

    Tai Xia; Li Xifei; Kakimov Alibek; Li Shiyu; Liu Wen; Li Jianwei; Xu Jie; Li Dejun; Sun Xueliang;

  • 作者单位

    Tianjin Normal Univ Coll Phys & Mat Sci Tianjin Int Joint Res Ctr Surface Technol Energy Tianjin 300387 Peoples R China;

    Tianjin Normal Univ Coll Phys & Mat Sci Tianjin Int Joint Res Ctr Surface Technol Energy Tianjin 300387 Peoples R China|Xian Univ Technol Inst Adv Electrochem Energy Xian 710048 Shaanxi Peoples R China|Xian Univ Technol Sch Mat Sci & Engn Xian 710048 Shaanxi Peoples R China;

    Xian Univ Technol Inst Adv Electrochem Energy Xian 710048 Shaanxi Peoples R China|Xian Univ Technol Sch Mat Sci & Engn Xian 710048 Shaanxi Peoples R China;

    Xian Univ Technol Inst Adv Electrochem Energy Xian 710048 Shaanxi Peoples R China|Xian Univ Technol Sch Mat Sci & Engn Xian 710048 Shaanxi Peoples R China;

    Xian Univ Technol Inst Adv Electrochem Energy Xian 710048 Shaanxi Peoples R China|Xian Univ Technol Sch Mat Sci & Engn Xian 710048 Shaanxi Peoples R China;

    Xian Univ Technol Inst Adv Electrochem Energy Xian 710048 Shaanxi Peoples R China|Xian Univ Technol Sch Mat Sci & Engn Xian 710048 Shaanxi Peoples R China;

    Tianjin Normal Univ Coll Phys & Mat Sci Tianjin Int Joint Res Ctr Surface Technol Energy Tianjin 300387 Peoples R China;

    Tianjin Normal Univ Coll Phys & Mat Sci Tianjin Int Joint Res Ctr Surface Technol Energy Tianjin 300387 Peoples R China;

    Tianjin Normal Univ Coll Phys & Mat Sci Tianjin Int Joint Res Ctr Surface Technol Energy Tianjin 300387 Peoples R China|Xian Univ Technol Inst Adv Electrochem Energy Xian 710048 Shaanxi Peoples R China|Xian Univ Technol Sch Mat Sci & Engn Xian 710048 Shaanxi Peoples R China|Western Univ London Nanomat & Energy Lab Dept Mech & Mat Engn London ON N6A 5B9 Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Si; atomic layer deposition; electrical properties;

    机译：Si;原子层沉积;电性能;

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