Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry

Aaron M. Katzenmeyer; Ting S. Luk; Ezra Bussmann; Steve Young; Evan M. Anderson; Michael T. Marshall; James A. Ohlhausen; Paul Kotula; Ping Lu; DeAnna M. Campbell; Tzu-Ming Lu; Peter Q. Liu; Daniel R. Ward; Shashank Misra

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Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry

机译：使用中红外椭圆形式评估硅的原子薄δ掺杂

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Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). Here, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to the S-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. The carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM 6-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM 6-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.

机译：氢气光刻已经用于模板基于膦的表面化学来制造原子尺度装置，这是我们缩写为原子精密先进制造（APAM）的过程。这里，我们使用中红外变角光谱椭圆形测量仪（IR-Vase）在使用APAM兼容过程中的硅中表征单纳米厚度磷掺杂剂层（δ层）。大的萌芽响应直接归因于S层，并且可以用于在整合附加处理步骤时对APAM层的状况进行非破坏性监测。从我们的室温IR-Vast测量中提取的载流子密度和迁移率与低温磁传输测量一致，表示APAM 6层在室温下起作用。最后，从这些测量中提取的介电常数表明，APAM 6层中的掺杂非常大，使得它们的低频面内响应是使硅化物的激发。然而，没有血浆共振的指示，可能是由于减少的维度和/或低散射寿命。

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《Journal of Materials Research》 |2020年第16期|2098-2105|共8页
作者
Aaron M. Katzenmeyer; Ting S. Luk; Ezra Bussmann; Steve Young; Evan M. Anderson; Michael T. Marshall; James A. Ohlhausen; Paul Kotula; Ping Lu; DeAnna M. Campbell; Tzu-Ming Lu; Peter Q. Liu; Daniel R. Ward; Shashank Misra;
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作者单位

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

Department of Electrical Engineering The State University of New York at Buffalo Buffalo New York 14260 USA;

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

Sandia National Laboratories Albuquerque New Mexico 87123 USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry

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