• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Materials Research >Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy
【24h】

Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy

机译：通过分子束外延生长的载流子选择性接触GaP / Si太阳能电池

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Integration of the III-V material systems on Si is an enabling technology for achieving high efficiency heterojunction Si-based photovoltaic devices. Gallium phosphide (GaP) offers numerous potential electrical, optical, and material advantages over amorphous silicon (a-Si) for the realization of several heterojunction solar cell designs. In this paper, details are given for the growth, fabrication, and characterization of different n-GaP-Si heterojunction solar cells to explore the effect of GaP as a carrier-selective contact. The cell performance is promising with high Si bulk lifetime (similar to 2.2 ms at the injection level of 10(15) cm(-3)) and an open-circuit voltage of 618 mV and an efficiency of 13.1% in this new solar cell design. In addition to GaP as an electron-selective contact, MoOx was successfully implemented as a hole-selective contact in the n-GaP-Si heterojunction solar cell, increasing efficiency to 14.1% by improving the short wavelength response. The Si bulk lifetime is maintained during growth of GaP on Si by two different approaches and their effects on GaP/Si solar cell performance are also presented.
机译：在Si上集成III-V材料系统是实现高效率异质结硅基光伏器件的一项使能技术。与非晶硅（a-Si）相比，磷化镓（GaP）具有许多潜在的电，光学和材料优势，可实现多种异质结太阳能电池设计。本文详细介绍了不同n-GaP / n-Si异质结太阳能电池的生长，制造和表征，以探索GaP作为载流子选择性接触的作用。这种新型太阳能电池具有很高的Si体寿命（在10（15）cm（-3）的注入水平下约为2.2 ms）和618 mV的开路电压以及13.1％的效率，有望实现电池性能设计。除了将GaP用作电子选择性接触外，MoOx还成功地用作n-GaP / n-Si异质结太阳能电池中的空穴选择性接触，通过改善短波长响应将效率提高到14.1％。通过两种不同的方法在GaP在Si上生长期间可以保持Si的体寿命，并且还介绍了它们对GaP / Si太阳能电池性能的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号