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首页> 外文期刊>Journal of Materials Research >Two-step growth of high-quality Nb/(Bi_(0.5)Sb_(0.5))_2Te_3/Nb heterostructures for topological Josephson junctions
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Two-step growth of high-quality Nb/(Bi_(0.5)Sb_(0.5))_2Te_3/Nb heterostructures for topological Josephson junctions

机译：拓扑约瑟夫森结的高质量Nb /（Bi_（0.5）Sb_（0.5））_ 2Te_3 / Nb异质结构的两步生长

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摘要

The topological insulator/superconductor heterostructure is one of the most promising platforms to create and manipulate Majorana bound states. Here, we used molecular beam epitaxy to grow high-quality (Bi0.5Sb0.5)(2)Te-3 films on Nb surfaces. To promote proper (Bi0.5Sb0.5)(2)Te-3 film nucleation in the early growth stage, we developed a two-step growth method. Bi, Sb, and Te clusters were first evaporated at a low temperature of 180 degrees C, which is below the typical growth temperature and then annealed to form a crystalized passivation layer. Second, a standard (Bi0.5Sb0.5)(2)Te-3 film was grown under the normal deposition temperature of 280 degrees C. We used reflection high-energy electron diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction to further characterize the (Bi0.5Sb0.5)(2)Te-3 film and passivation layer quality. Finally, the top Nb film was laid down by magnetron sputtering at room temperature. The hetero-Nb/epitaxial (Bi0.5Sb0.5)(2)Te-3/Nb stacks were further fabricated into micro-Josephson junctions and showed clear Josephson currents demonstrating an excellent material quality.
机译：拓扑绝缘体/超导体异质结构是创建和操纵Majorana束缚态的最有希望的平台之一。在这里，我们使用分子束外延在Nb表面上生长高质量（Bi0.5Sb0.5）（2）Te-3薄膜。为了在生长早期促进适当的（Bi0.5Sb0.5）（2）Te-3薄膜成核，我们开发了一种两步生长方法。 Bi，Sb和Te团簇首先在低于典型生长温度的180摄氏度的低温下蒸发，然后退火以形成结晶的钝化层。其次，在标准沉积温度280℃下生长标准（Bi0.5Sb0.5）（2）Te-3膜。我们使用了反射高能电子衍射，高分辨率透射电子显微镜，X射线光电子光谱和X射线衍射进一步表征（Bi0.5Sb0.5）（2）Te-3膜和钝化层的质量。最后，在室温下通过磁控溅射沉积顶部的Nb膜。异质Nb /外延（Bi0.5Sb0.5）（2）Te-3 / Nb堆叠体进一步制成微型Josephson结，并显示出清晰的Josephson电流，显示出优异的材料质量。

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  • 来源
    《Journal of Materials Research》 |2018年第16期|2423-2433|共11页
  • 作者

    Zhang Hui; Ma Xiaodong; Li Lin; Langenberg Deler; Zeng Chang Gan; Miao Guo Xing;

  • 作者单位

    Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale HFNL, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale HFNL, Hefei 230026, Anhui, Peoples R China;

    Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada;

    Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada;

    Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale HFNL, Hefei 230026, Anhui, Peoples R China;

    Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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