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Electrical properties of SnO_2:Sb ultrathin films prepared by colloidal deposition process

机译：胶体沉积法制备SnO_2：Sb超薄膜的电学性能

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摘要

In the present work, we are investigating the electronic transport mechanism for antimony-doped tin oxide (ATO) ultrathin films produced by a colloidal deposition process (CDP) of nanocrystals synthesized via a solvothermal route in organic medium. The ATO ultrathin films were prepared from nanoparticles containing 9 mol% of Sb and the observed electrical resistivity at room temperature was 1.55, 1.10 × 10~(-1), and 1.83 × 10~(-3) O cm, respectively, for the 40, 45, and 71 nm films. X-ray diffraction, transmission electron microscopy, scanning electron microscopy, and atomic force microscopy were carried out to investigate the films and electrical resistivity measurements taken in the four-probe mode with temperature ranging from -260 to 27 ℃ (13-300 K ± 0.1 K). Results show a good data fitting on Mott's two-dimensional (2D) noninteracting variable range hopping for the 45 nm thin film, which is not further observed for the ATO ultrathin films obtained from CDP.
机译：在目前的工作中，我们正在研究通过溶剂热途径在有机介质中合成的纳米晶体的胶体沉积工艺（CDP）制备的锑掺杂氧化锡（ATO）超薄膜的电子传输机理。 ATO超薄膜是由含9 mol％Sb的纳米颗粒制备的，室温下的电阻率分别为1.55、1.10×10〜（-1）和1.83×10〜（-3）O cm。 40、45和71 nm薄膜。进行了X射线衍射，透射电子显微镜，扫描电子显微镜和原子力显微镜研究，以研究在温度为-260至27℃（13-300 K± 0.1 K）。结果表明，对于45 nm薄膜，Mott的二维（2D）非相互作用可变范围跳变具有良好的数据拟合性，对于从CDP获得的ATO超薄膜则没有进一步观察到。

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  • 来源
    《Journal of Materials Research》 |2016年第1期|148-153|共6页
  • 作者

    Tiago G. Conti; Adenilson J. Chiquito; Edson R. Leite;

  • 作者单位

    LIEC, Department of Chemistry, Federal University of Sao Carlos, Sao Carlos, Sao Paulo 13565-905, Brazil;

    NanoLab, Department of Physics, Federal University of Sao Carlos, Sao Carlos, Sao Paulo 13565-905, Brazil;

    LIEC, Department of Chemistry, Federal University of Sao Carlos, Sao Carlos, Sao Paulo 13565-905, Brazil;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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