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首页> 外文期刊>Journal of Materials Research >Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells
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Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells

机译：多晶硅钝化隧穿触点，用于高效硅太阳能电池

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摘要

We apply n- and p-type polycrystalline silicon (poly-Si) films on tunneling SiO_x to form passivated contacts to n-type Si wafers. The resulting induced emitter and n+ back surface field junctions of high carrier selectivity and low contact resistivity enable high efficiency Si solar cells. This work addresses the materials science of their performance governed by the properties of the individual layers (poly-Si, tunneling oxide) and more importantly, by the process history of the cell as a whole. Tunneling SiO_x layers (＜2 nm) are grown thermally or chemically, followed by a plasma enhanced chemical vapor deposition growth of p+ or n+ doped a-Si:H. The latter is thermally crystallized into poly-Si, resulting in grain nucleation and growth as well as dopant diffusion within the poly-Si and penetration through the tunneling oxide into the Si base wafer. The cell process is designed to improve the passivation of both oxide interfaces and tunneling transport through the oxide. A novel passivation technique involves coating of the passivated contact and whole cell with atomic layer deposited Al_2O_3 and activating them at 400 ℃. The resulting excellent passivation persists after subsequent chemical removal of the Al_2O_3. The preceding cell process steps must be carefully tailored to avoid structural and morphological defects, as well as to maintain or improve passivation, and carrier selective transport. Furthermore, passivated contact metallization presents significant challenges, often resulting in passivation loss. Suggested remedies include improved Si cell wafer surface morphology (without micropyramids) and postdepos-ited a-Si:H capping layers over the poly-Si.
机译：我们在隧穿SiO_x上应用n型和p型多晶硅（poly-Si）膜，以形成与n型Si晶片的钝化接触。所产生的感应的发射极和高载流子选择性和低接触电阻率的n + / n背表面场结实现了高效的Si太阳能电池。这项工作解决了材料性能的材料科学问题，这些问题受各个层（多晶硅，隧道氧化物）的性能支配，更重要的是受整个电池工艺历史的支配。通过热或化学方法生长隧道SiO_x层（<2 nm），然后进行p +或n +掺杂的a-Si：H的等离子体增强化学气相沉积生长。后者被热结晶成多晶硅，导致晶粒成核和生长，以及掺杂剂在多晶硅内扩散，并穿过隧穿氧化物渗透到硅基晶片中。电池工艺旨在改善氧化物界面的钝化和通过氧化物的隧穿传输。一种新的钝化技术包括用原子层沉积的Al_2O_3覆盖钝化的接触层和整个电池，并在400℃下对其进行活化。在随后的化学去除Al_2O_3之后，所得的极好的钝化仍然存在。前面的细胞处理步骤必须精心设计，以避免结构和形态缺陷，以及保持或改善钝化和载体选择性转运。此外，钝化的接触金属化提出了重大挑战，通常导致钝化损失。建议的补救措施包括改善硅电池晶片表面的形貌（无微金字塔）和在多晶硅上沉积后的a-Si：H覆盖层。

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  • 来源
    《Journal of Materials Research》 |2016年第6期|671-681|共11页
  • 作者

    Bill Nemeth; David L. Young; Matthew R. Page; Vincenzo LaSalvia; Steve Johnston; Robert Reedy; Paul Stradins;

  • 作者单位

    National Renewable Energy Laboratory, Golden, Colorado 80401, USA;

    National Renewable Energy Laboratory, Golden, Colorado 80401, USA;

    National Renewable Energy Laboratory, Golden, Colorado 80401, USA;

    National Renewable Energy Laboratory, Golden, Colorado 80401, USA;

    National Renewable Energy Laboratory, Golden, Colorado 80401, USA;

    National Renewable Energy Laboratory, Golden, Colorado 80401, USA;

    National Renewable Energy Laboratory, Golden, Colorado 80401, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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