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首页> 外文期刊>Journal of Materials Research >Nanocrystalline diamond films prepared by pulsed electron beam ablation on different substrates
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Nanocrystalline diamond films prepared by pulsed electron beam ablation on different substrates

机译:脉冲电子束烧蚀在不同基材上制备的纳米晶金刚石膜

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摘要

Nanocrystalline diamond films have been deposited by pulsed electron beam ablation from a single target and on different substrates at room temperature and under argon background gas at 0.5 Pa. The films have been deposited from a highly ordered pyrolytic graphite target on four different substrate materials, which include silicon, stainless steel, sapphire, and cubic boron nitride. Based on experimental measurement data, obtained from various analytical techniques, it has been observed that sp~3 bonded carbon content, grain size, film roughness, and nanocrystalline fraction of the films do not seem to be much affected by the type of substrate material used. The thickness of the films, in the range of ~70-90 nm, seems to be relatively the same irrespective of the substrate material. Hardness measurements have shown that film hardness, ranging between 18.5 and 19.5 GPa, is not remarkably influenced by the type of substrate material.
机译:纳米晶金刚石薄膜已通过脉冲电子束烧蚀从单个靶材在室温下和在0.5 Pa的氩气背景气体下沉积在不同的基材上。该薄膜已从高度有序的热解石墨靶材沉积在四种不同的基材上,包括硅,不锈钢,蓝宝石和立方氮化硼。根据从各种分析技术获得的实验测量数据,已经观察到,sp〜3键合碳含量,晶粒尺寸,膜粗糙度和膜的纳米晶部分似乎不受所用基材类型的很大影响。 。薄膜的厚度在〜70-90 nm范围内,与基材的材料无关。硬度测量表明,在18.5至19.5 GPa之间的膜硬度不受基材材料类型的明显影响。

著录项

  • 来源
    《Journal of Materials Research》 |2016年第13期|1964-1971|共8页
  • 作者单位

    School of Engineering, Laurentian University, Sudbury, Ontario P3E 2C6, Canada;

    Jubail Technical Institute, Saudia Arabia;

    Department of Electrical and Computer Engineering, McMaster University, Hamilton, Ontario L8S 4K1, Canada;

    Department of Electrical and Computer Engineering, McMaster University, Hamilton, Ontario L8S 4K1, Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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