Planarized arrays of aligned, untangled multiwall carbon nanotubes with Ohmic back contacts

C. Rochford; S.J. Limmer; S.W. Howell; T.E. Beechem; M.P. Siegal

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Planarized arrays of aligned, untangled multiwall carbon nanotubes with Ohmic back contacts

机译：带有欧姆背触点的对准的，无缠结的多壁碳纳米管的平面阵列

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Vertically aligned, untangled planarized arrays of multiwall carbon nanotubes (MWNTs) with Ohmic back contacts were grown in nanopore templates on arbitrary substrates. The templates were prepared by sputter depositing Nd-doped Al films onto W-coated substrates, followed by anodization to form an aluminum oxide nanopore array. The W underlayer helps eliminate the aluminum oxide barrier that typically occurs at the nanopore bottoms by instead forming a thin WO_3 layer. The WO_3 can be selectively etched to enable electrodeposition of Co catalysts with control over the Co site density. This led to control of the site density of MWNTs grown by thermal chemical vapor deposition, with W also serving as a back electrical contact. Ohmic contact to MWNTs was confirmed, even following ultrasonic cutting of the entire array to a uniform height.

机译：在任意基板上的纳米孔模板中生长具有欧姆背接触的垂直排列，无纠缠的平面化多壁碳纳米管（MWNT）平面阵列。通过将掺杂Nd的Al膜溅射沉积到W涂覆的基底上，然后进行阳极氧化以形成氧化铝纳米孔阵列，来制备模板。 W底层通过代替形成薄的WO_3层来帮助消除通常在纳米孔底部出现的氧化铝阻挡层。可以选择性地蚀刻WO_3，以实现对Co催化剂的电沉积，并控制Co位置密度。这导致对通过热化学气相沉积生长的MWNT的位点密度的控制，其中W还用作背面电触点。甚至在将整个阵列超声切割至均匀高度后，也证实了与MWNT的欧姆接触。

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《Journal of Materials Research》 |2015年第2期|315-322|共8页
作者
C. Rochford; S.J. Limmer; S.W. Howell; T.E. Beechem; M.P. Siegal;
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Sandia National Laboratories, Albuquerque, New Mexico 87185, USA;

Sandia National Laboratories, Albuquerque, New Mexico 87185, USA;

Sandia National Laboratories, Albuquerque, New Mexico 87185, USA;

Sandia National Laboratories, Albuquerque, New Mexico 87185, USA;

Sandia National Laboratories, Albuquerque, New Mexico 87185, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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Planarized arrays of aligned, untangled multiwall carbon nanotubes with Ohmic back contacts

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