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Effect of BaCu(B_2O_5) additions on the sintering behaviors and dielectric-magnetic properties of Co_2Z hexaferrite

机译：BaCu（B_2O_5）的添加对Co_2Z六方铁氧体烧结行为和介磁性能的影响

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摘要

In this study, BaCu(B_2O_5) (BCB) is utilized as the sintering aids to decrease the sintering temperature of Ba_3(Co_(0.4)Zn_(0.6))_2Fe_(24)O_(41) [(Co_(0.4)Zn_(0.6))_2Z]. The influence of BCB addition on the microstructures as well as the dielectric and magnetic properties of the (Co_(0.4)Zn_(0.6))_2Z ceramic samples is investigated. It is found that the 5 wt% BCB added (Co_(0.4)Zn_(0.6))_2Z sintered at 925 ℃ exhibits both a high relative density of about 95% and a homogeneous microstructure with few pores existing. Both the relative permittivity and permeability of the sample keep stable from 10 to 800 MHz. Also, the dielectric and magnetic loss are low and effectively suppressed within a wide frequency range. For the specimen with 5 wt% BCB, the dielectric and magnetic loss tangent are 0.003 and 0.039 at 200 MHz, respectively. In addition, a compatibility test with Ag powders has been carried out. The optimized properties indicate that this kind of low temperature sintered Z-type hexaferrite is a good candidate for the applications of multilayer chip inductors.
机译：在这项研究中，BaCu（B_2O_5）（BCB）被用作烧结助剂来降低Ba_3（Co_（0.4）Zn_（0.6））_ 2Fe_（24）O_（41）[（Co_（0.4）Zn_（ 0.6））_ 2Z]。研究了BCB添加对（Co_（0.4）Zn_（0.6））_ 2Z陶瓷样品的微观结构以及介电和磁性能的影响。发现在925℃烧结的5wt％的BCB（Co_（0.4）Zn_（0.6））_ 2Z具有相对较高的相对密度（约95％）和均匀的微观结构，几乎没有孔。样品的相对介电常数和磁导率在10至800 MHz范围内均保持稳定。而且，介电和磁损耗低，并且在宽频率范围内被有效地抑制。对于BCB为5 wt％的样品，其在200 MHz时的介电和磁损耗正切分别为0.003和0.039。另外，已经进行了与Ag粉的相容性测试。优化的性能表明，这种低温烧结的Z型六方铁氧体是多层片式电感器应用的良好选择。

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  • 来源
    《Journal of Materials Research》 |2015年第18期|2747-2752|共6页
  • 作者

    Panpan Chang; Li He; Hong Wang;

  • 作者单位

    Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an 710049, China;

    Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an 710049, China;

    Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an 710049, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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