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首页> 外文期刊>Journal of Materials Research >Neodymium doped titania as photoanode and graphene oxide-CuS composite as counter electrode material in quantum dot solar cell
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Neodymium doped titania as photoanode and graphene oxide-CuS composite as counter electrode material in quantum dot solar cell

机译：量子点太阳能电池中掺钕的二氧化钛为光阳极，氧化石墨烯-CuS复合材料为反电极材料

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摘要

The enhanced photoresponse of commercial TiO_2 (C-TiO_2) nanoparticles in quantum dot (QD) sensitized solar cells, when doped with neodymium (Nd), is explored for graphene oxide-copper sulphide (GO-CuS) composite material as counter electrode. The modification of C-TiO_2 and the preparation of GO-CuS were done by solid state and sonication methods respectively. The same were characterized by spectroscopy, microscopy, and cyclic voltammetry techniques. Results clearly indicate an enhanced conversion efficiency of ～ 1.6 times over the undoped C-TiO_2. UV and reflectance spectroscopy reveal that the dopants/defects/oxygen vacancies create midbands causing favorable surface electron states which act as electron traps suppressing recombination and the same is later detrapped leading to an efficient electron transfer. The retention of anatase phase, increase in particle size and decrease in band gap energy to visible range together with high surface area imparted by the GO to CuS in counter electrode facilitate good light harvesting and rapid enhanced electron transfer to redox system on doping. These findings make Nd-TiO_2 a good photoanode material and GO-CuS a good counter electrode in QD solar cells.
机译：研究了掺钕（Nd）的量子点（QD）敏化太阳能电池中商用TiO_2（C-TiO_2）纳米粒子增强的光响应，用于氧化石墨烯-硫化铜（GO-CuS）复合材料作为对电极。分别采用固态法和超声法对C-TiO_2进行改性和GO-CuS的制备。通过光谱学，显微镜学和循环伏安法对它们进行了表征。结果清楚地表明，与未掺杂的C-TiO_2相比，转化效率提高了约1.6倍。紫外和反射光谱法表明，掺杂剂/缺陷/氧空位产生了中带，从而引起了有利的表面电子态，这些态电子态起到了抑制复合的电子陷阱的作用，并且随后将其释放从而导致有效的电子转移。锐钛矿相的保留，粒径的增加和能带隙能量的减小到可见光范围，以及GO赋予反电极中的CuS高表面积，有利于良好的光收集，并在掺杂时迅速增强电子向氧化还原系统的转移。这些发现使Nd-TiO_2成为QD太阳能电池的良好光阳极材料，而GO-CuS成为良好的对电极。

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  • 来源
    《Journal of Materials Research》 |2015年第21期|3241-3251|共11页
  • 作者

    Laveena P. DSouza; Sreeramareddygari Muralikrishna; Hunsur R. Chandan; Thippeswamy Ramakrishnappa; R. Geetha Balakrishna;

  • 作者单位

    Center for Nano and Material Sciences, Jain University, Bangalore 562112, India;

    Center for Nano and Material Sciences, Jain University, Bangalore 562112, India;

    Center for Nano and Material Sciences, Jain University, Bangalore 562112, India;

    Center for Nano and Material Sciences, Jain University, Bangalore 562112, India;

    Center for Nano and Material Sciences, Jain University, Bangalore 562112, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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