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Strong visible light emission from silicon-oxycarbide nanowire arrays prepared by electron beam lithography and reactive ion etching

机译:通过电子束光刻和反应离子刻蚀制备的碳氧化硅纳米线阵列发出的强大可见光

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摘要

The present report presents results from the fabrication, structural, and optical characteristics of sub-100 nm thermal chemical vapor deposition-grown silicon-oxycarbide (SiC_xO_y) nanowire (NW) arrays fabricated by e-beam lithography and reactive-ion-etching. The composition of SiC_xO_y materials follows closely the silicon-oxycarbide stoichiometry [SiC_xO_(2(1-x)), (0 < x < 1)] as observed by compositional and structural analysis. The corresponding structural and bonding evolution of SiC_xO_y, are well-correlated with changes in their optical properties, as demonstrated by the linear dependence of their optical gap and refractive index with [Si-C]/[Si-O] bond-area ratio. By virtue of these advantages, properly tailored SiC_xO_y NWs were fabricated, exhibiting strong room-temperature visible photoluminescence (PL) through engineering of [Si-C]/[Si-O] bonds. The current studies focused on the thermal-oxidation and excitation intensity behavior of SiC_xO_y NWs revealed their very good stability, as their luminescence characteristics remain unchanged upon annealing in oxygen ambient (250 ℃), while the PL intensity dependence on the excitation power-density exhibited a linear increase up to ~800 W/cm~2.
机译:本报告介绍了通过电子束光刻和反应离子刻蚀制备的亚100纳米以下热化学气相沉积生长的碳氧化硅(SiC_xO_y)纳米线(NW)阵列的制造,结构和光学特性的结果。通过成分和结构分析观察到,SiC_xO_y材料的成分与碳氧化硅的化学计量[SiC_xO_(2(1-x)),(0 <x <1)]密切相关。 SiC_xO_y的相应结构和键的演变与它们的光学性质的变化具有良好的相关性,这由其光学间隙和折射率与[Si-C] / [Si-O]键-面积比的线性关系证明。凭借这些优势,制造了经过适当定制的SiC_xO_y NW,通过对[Si-C] / [Si-O]键进行工程处理,可显示出强大的室温可见光致发光(PL)。目前针对SiC_xO_y NWs的热氧化和激发强度行为的研究表明,它们具有非常好的稳定性,因为在氧环境(250℃)下退火后,它们的发光特性保持不变,而PL强度与激发功率密度有关。线性增加到〜800 W / cm〜2。

著录项

  • 来源
    《Journal of Materials Research》 |2015年第23期|3692-3699|共8页
  • 作者单位

    Colleges of Nanoscale Sciences and Engineering, State University of New York Polytechnic Institute, Albany, New York 12203, USA;

    Colleges of Nanoscale Sciences and Engineering, State University of New York Polytechnic Institute, Albany, New York 12203, USA;

    Colleges of Nanoscale Sciences and Engineering, State University of New York Polytechnic Institute, Albany, New York 12203, USA;

    IBM Microelectronics, Semiconductor Research and Development Center, Hopewell Junction, New York 12533, USA;

    Colleges of Nanoscale Sciences and Engineering, State University of New York Polytechnic Institute, Albany, New York 12203, USA;

    Colleges of Nanoscale Sciences and Engineering, State University of New York Polytechnic Institute, Albany, New York 12203, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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