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首页> 外文会议>International Conference on Advancement of Materials and Nanotechnology >Top-Down Approach: Fabrication of Silicon Nanowires using Scanning Electron Microscope based Electron Beam Lithography Method and Inductively Coupled Plasma-Reactive Ion Etching
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Top-Down Approach: Fabrication of Silicon Nanowires using Scanning Electron Microscope based Electron Beam Lithography Method and Inductively Coupled Plasma-Reactive Ion Etching

机译：自上而下的方法：使用扫描电子显微镜基电子束光刻方法和电感耦合等离子体反应离子蚀刻制造硅纳米线

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The "top-down" approach is used to fabricate Silicon Nanowires using ScanningElectro n Microscope (SEM) based Electron Beam Lithography (EBL) method. SiliconNanowires or one dimensional nanowires are widely recognized as important elements in development of certain advance nanoscale devices. The Silicon Nanowires with line-width of 50 nm are successfully fabricated at our clean room using this approach. The approach used includes SEM based EBL method, followed by size reduction using Inductively Coupled Plasma – Reactive Ion Etching (ICP –RIE). In addition, the diameter and the length of the Silicon Nanowires can be precisely controlled. In this paper, the Silicon Nanowires formation which includes the EBL system and fabrication processes have been reviewed and discussed. High Power Microscope (HPM), SEM and Atomic Force Microscopy (AFM) were used to characterize the Silicon Nanowires.
机译：“自上而下”方法用于使用扫描电动扫描（SEM）基电子束光刻（EBL）方法来制造硅纳米线。 Siliconnanowires或一维纳米线被广泛认识为某些先进纳米级装置的开发中的重要元素。使用这种方法在我们的洁净室中成功制造具有线宽50nm的硅纳米线。使用的方法包括基于SEM的EBL方法，然后使用电感耦合等离子体反应离子蚀刻（ICP -RIE）尺寸减小。另外，可以精确地控制硅纳米线的直径和长度。本文综述并讨论了包括EBL系统和制造工艺的硅纳米线形成。高功率显微镜（HPM），SEM和原子力显微镜（AFM）用于表征硅纳米线。

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