• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Materials Research >Effects of Be and Co addition on the growth of Sn whiskers and the properties of Sn-based Pb-free solders
【24h】

Effects of Be and Co addition on the growth of Sn whiskers and the properties of Sn-based Pb-free solders

机译：铍和钴的添加对锡晶须生长和锡基无铅焊料性能的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

To enhance the reliability of Pb-free solders in high temperature and high humidity conditions, the minor alloying elements of Be and Co are investigated in terms of the growth of Sn whiskers and various properties of Sn-based Pb-free solders. Sn whisker growth is suppressed by adding up to 0.02 wt% Be to Sn-based solders. Adding Be and Co can effectively reduce the undercooling of Sn-1.0Ag-0.5Cu (wt%) solders. And the microstructures of Sn-1.0Ag-0.5Cu-0.02Be solders are similar to those of Sn-1.0Ag-0.5Cu. Furthermore, adding Co to solders increases the microhardness number as a result of the solid solution hardening. Adding Be causes no changes in the morphology or thickness of Cu_6Sn_5 at the Cu/OSP (organic solderability preservative) under bump metallurgy interface. However, the scallop-like Cu_6Sn_5 microstructure changes to a flat (Cu,Co)_6Sn_5 microstructure when 0.05 wt% of Co is added to Sn-1.0Ag-0.5Cu-0.02Be solders.
机译：为了提高无铅焊料在高温和高湿条件下的可靠性，根据锡晶须的生长和锡基无铅焊料的各种性能，研究了Be和Co的微量合金元素。通过向基于Sn的焊料中添加0.02 wt％的Be，可以抑制Sn晶须的生长。添加Be和Co可以有效减少Sn-1.0Ag-0.5Cu（wt％）焊料的过冷。 Sn-1.0Ag-0.5Cu-0.02Be焊料的微观结构与Sn-1.0Ag-0.5Cu相似。此外，由于固溶体硬化，向焊料中添加Co增加了显微硬度值。添加Be不会导致凸块冶金界面下的Cu / OSP（有机可焊性防腐剂）处的Cu_6Sn_5的形态或厚度发生变化。然而，当将0.05重量％的Co添加到Sn-1.0Ag-0.5Cu-0.02Be焊料中时，扇贝状的Cu_6Sn_5微结构变为平坦的（Cu，Co）_6Sn_5微结构。

著录项

  • 来源
    《Journal of Materials Research》 |2012年第14期|p.1877-1886|共10页
  • 作者

    Jaewon Chang; Sun-Kyoung Seo; Moon Gi Cho; Dong Nyung Lee; Kyoo-Sik Kang; Hyuck Mo Lee;

  • 作者单位

    Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea;

    Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea Package Development Team, Semiconductor R&D Center, Samsung Electronics, Hwasung-city, Gyeonggi-do 445-701, Republic of Korea;

    Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea Package Development Team, Semiconductor R&D Center, Samsung Electronics, Hwasung-city, Gyeonggi-do 445-701, Republic of Korea;

    Department of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Republic of Korea R&D Center, Iljin Materials Co., Ltd., Mapo-gu, Seoul 121-716, Republic of Korea;

    R&D Center, Iljin Materials Co., Ltd., Mapo-gu, Seoul 121-716, Republic of Korea;

    Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号