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首页> 外文期刊>Journal of Materials Research >The indentation hardness of silicon measured by instrumented indentation: What does it mean?
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The indentation hardness of silicon measured by instrumented indentation: What does it mean?

机译：通过仪器压痕测量的硅压痕硬度：是什么意思？

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摘要

The indentation hardness of three different pure forms of silicon was investigated by two different methods. The hardness was probed by direct imaging of the residual impressions and by instrumented indentation using the Oliver-Pharr method. The forms of silicon used were a defective form of amorphous silicon, an amorphous form close to a continuous random network, and a crystalline silicon. The first form deforms via plastic flow and the latter two via phase transition. Two different unloading rates, fast and slow, were used to vary the phase transition behavior. This influenced the relative hardness as measured by instrumented indentation, which is not a reliable method to quantify hardness values in phase transforming materials. Thus, for our phase transforming silicon system, the relative hardness between samples can only be determined correctly by direct imaging, provided that the image accurately reveals the extent of the phase transformed volume.
机译：通过两种不同的方法研究了三种不同纯净形式的硅的压痕硬度。通过对残留压痕进行直接成像并使用Oliver-Pharr方法通过仪器压痕来探测硬度。所使用的硅的形式是非晶硅的缺陷形式，接近连续随机网络的非晶形式和晶体硅。前一种形式通过塑性流动变形，后两种形式通过相变变形。两种不同的卸载速率（快和慢）用于改变相变行为。这影响了通过仪器压痕测量的相对硬度，这不是量化相变材料中硬度值的可靠方法。因此，对于我们的相变硅系统，样品之间的相对硬度只能通过直接成像来正确确定，只要图像能准确显示出相变体积的程度即可。

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  • 来源
    《Journal of Materials Research》 |2012年第24期|3066-3072|共7页
  • 作者

    Bianca Haberl; Leonardus Bimo Bayu Aji; J.S. Williams; Jodie E. Bradby;

  • 作者单位

    Department of Electronic Materials Engineering, Research School of Physics, and Engineering, The Australian National University, Canberra, Australian Capital Territory 0200, Australia;

    Department of Electronic Materials Engineering, Research School of Physics, and Engineering, The Australian National University, Canberra, Australian Capital Territory 0200, Australia;

    Department of Electronic Materials Engineering, Research School of Physics, and Engineering, The Australian National University, Canberra, Australian Capital Territory 0200, Australia;

    Department of Electronic Materials Engineering, Research School of Physics, and Engineering, The Australian National University, Canberra, Australian Capital Territory 0200, Australia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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