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首页> 外文期刊>Journal of Materials Research >Growth of in situ multilayer diamond films by varying substrate-filament distance in hot-filament chemical vapor deposition
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Growth of in situ multilayer diamond films by varying substrate-filament distance in hot-filament chemical vapor deposition

机译：在热丝化学气相沉积中通过改变基体丝距来生长原位多层金刚石膜

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摘要

Single and multilayer diamond films were grown on silicon by varying substrate distance in hot-filament chemical vapor deposition. The grown films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. From SEM surface images, it was observed that the films grown at substrate distances of 8, 7, and 6 mm and temperatures of 740, 780, and 830 ℃ possessed cauliflower, pseudocubes, and finally well-faceted cubes morphology. SEM fracture cross-sectional investigations revealed that growth of pseudocubes initiated on the top of cauliflower structure. By using the parametric relations gathered from single layer diamond growth studies, first time, multilayer diamond coatings were grown in situ with tunable thickness by only varying the substrate distance from filament assembly during deposition.
机译：通过在热丝化学气相沉积中改变衬底距离，在硅上生长单层和多层金刚石膜。通过扫描电子显微镜（SEM）和拉曼光谱对生长的膜进行表征。从SEM表面图像观察到，在衬底距离为8、7和6mm以及温度为740、780和830℃的条件下生长的膜具有花椰菜，假立方体和最终具有良好切面的立方体形态。 SEM断面研究表明，假菜豆的生长始于花椰菜结构的顶部。通过使用从单层金刚石生长研究中收集到的参数关系，第一次，通过仅改变沉积过程中距丝束组件的基材距离，就可以以可调的厚度原位生长多层金刚石涂层。

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  • 来源
    《Journal of Materials Research》 |2012年第24期|3123-3129|共7页
  • 作者

    Mubarak Ali; Mustafa UErgen;

  • 作者单位

    Department of Physics, COMSATS Institute of Information Technology (CUT), Islamabad 44000, Pakistan;

    Department of Metallurgical and Materials Engineering, Istanbul Technical University,34469 Maslak, Istanbul, Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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