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首页> 外文期刊>Journal of Materials Research >Tungsten alloying of the Ni(P) films and the reliability of Sn-3.5Ag/NiWP solder joints
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Tungsten alloying of the Ni(P) films and the reliability of Sn-3.5Ag/NiWP solder joints

机译：Ni（P）膜的钨合金化和Sn-3.5Ag / NiWP焊点的可靠性

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摘要

Effects of tungsten (W) addition to the electroless Ni(P) under bump metallization (UBM) on the solder joint reliability were investigated by preparing Ni-xW-5P and Ni-xW-9P films. Characteristics of the NiWP films, interfacial reaction with Sn-3.5Ag solder, and the impact resistance of solder joints was investigated by conducting differential scanning calorimetry, x-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), and drop tests. Tungsten increased the thermal stability of the film and raised the crystallization temperature, but the crystallinity decreased with the W content in the film. The drop impact resistance of the Sn-3.5Ag/Ni-xW-9P joints was improved remarkably with the W content in the UBM, which was a direct consequence of the elimination of Ni_3Sn_4 spalling from the UBM. Additions of W up to 16 wt.% did not suppress intermetallic compound (IMC) spalling completely, but 22 wt.% W did up to 4 reflows, which increased the number of drops to failure (N_f) from 50 to over 300. TEM study showed the presence of an amorphous (Ni,W)_3P layer between Ni_3Sn_4 and the original Ni-22W-9P UBM.
机译：通过制备Ni-xW-5P和Ni-xW-9P膜，研究了在凸块金属化（UBM）下在化学镀Ni（P）中添加钨（W）对焊点可靠性的影响。通过进行差示扫描量热法，X射线衍射，扫描电子显微镜，透射电子显微镜（TEM）和跌落测试，研究了NiWP膜的特性，与Sn-3.5Ag焊料的界面反应以及焊点的耐冲击性。钨提高了薄膜的热稳定性并提高了结晶温度，但结晶度随薄膜中W含量的降低而降低。 Sn-3.5Ag / Ni-xW-9P接头的抗滴落冲击性随UBM中的W含量显着提高，这是从UBM中消除了Ni_3Sn_4剥落的直接结果。最多添加16 wt。％的W不能完全抑制金属间化合物（IMC）的剥落，但是最多22 wt。％的W最多可以回流4次，这将失败的跌落次数（N_f）从50增加到超过300。研究表明，Ni_3Sn_4与原始Ni-22W-9P UBM之间存在无定形（Ni，W）_3P层。

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  • 来源
    《Journal of Materials Research》 |2011年第7期|p.889-895|共7页
  • 作者

    Dong Min Jang; Jin Yu;

  • 作者单位

    Electronic Packaging Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science & Technology (KAIST), Yuseong-gu, Daejeon 305-701, Republic of Korea;

    Electronic Packaging Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science & Technology (KAIST), Yuseong-gu, Daejeon 305-701, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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