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Thermal oxidation mechanism and stress evolution in Ta thin films

机译：Ta薄膜的热氧化机理及应力演化

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摘要

Oxidation-induced stress evolutions in Ta thin films were investigated using ex situ microstructure analyses and in situ wafer curvature measurements. It was revealed that Ta thin films are oxidized to a crystalline TaO_2 layer, which is subsequently oxidized to an amorphous tantalum pentoxide (a-Ta_2O_5) layer. Initial layered oxidation from Ta to TaO_2 phases abruptly induces high compressive stress up to about 3.5 GPa with fast diffusion of oxygen through the Ta layer. Subsequently, it is followed by stress relaxation with the oxidation time, which is related to the slow oxidation from TaO_2 to Ta_2O_5 phases. The initial compressive stress originates from the molar volume expansion during the layered formation of TaO_2 from the Ta layer, while the relaxation of the compressive stresses is ascribed to the amorphous character of the a-Ta_2O_5 layer. According to Kissinger's analysis of the stress evolution during an isochronic heating process, the oxygen diffusion process through the α-Ta_2O_5 layer is the rate-controlling stage in the layered oxidation process of forming a α-2-Ta_2O_5/TaO_2/Ta multilayer and has an activation energy of about 190.8 kJ/mol.
机译：使用异位显微结构分析和原位晶片曲率测量研究了Ta薄膜中氧化诱导的应力演变。发现Ta薄膜被氧化成结晶的TaO_2层，其随后被氧化成非晶的五氧化二钽（a-Ta_2O_5）层。从Ta到TaO_2相的初始分层氧化突然引起高达约3.5 GPa的高压缩应力，同时氧气快速扩散通过Ta层。随后，伴随着氧化时间的应力松弛，这与从TaO_2到Ta_2O_5相的缓慢氧化有关。初始压应力源自Ta层从TaO层的分层形成过程中的摩尔体积膨胀，而压应力的松弛归因于a-Ta_2O_5层的非晶特性。根据基辛格对等时加热过程中应力演化的分析，通过α-Ta_2O_5层的氧扩散过程是形成α-2-Ta_2O_5/ TaO_2 / Ta多层膜的分层氧化过程中的速率控制阶段。活化能约为190.8 kJ / mol。

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  • 来源
    《Journal of Materials Research》 |2010年第6期|1080-1086|共7页
  • 作者

    Yusung Jin; Jae Yong Song; Soo-Hwan Jeong; Jeong Won Kim; Tae Geol Lee; Ju Hwang Kim; Junhee Hahn;

  • 作者单位

    Department of Chemical Engineering, Kyungpook National University, Daegu 702-701. South Korea;

    rnDivision of Industrial Metrology, Korea Research Institute of Standards and Science,Daejeon 305-340, South Korea School of Science, University of Science and Technology,Daejeon 305-333, South Korea;

    rnDepartment of Chemical Engineering, Kyungpook National University, Daegu 702-701, South Korea;

    rnDivision of Industrial Metrology, Korea Research Institute of Standards and Science,Daejeon 305-340, South Korea;

    rnDivision of Convergence Technology, Korea Research Institute of Standards and Science.Daejeon 305-340, South Korea;

    rnDivision of Industrial Metrology, Korea Research Institute of Standards and Science,Daejeon 305-340, South Korea;

    rnDivision of Industrial Metrology, Korea Research Institute of Standards and Science,Daejeon 305-340, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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