• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Materials Research >Microstructural properties and formation mechanisms of GaN nanorods grown on Al_2O_3 (0001) substrates
【24h】

Microstructural properties and formation mechanisms of GaN nanorods grown on Al_2O_3 (0001) substrates

机译：在Al_2O_3（0001）衬底上生长的GaN纳米棒的微观结构性质和形成机理

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy images showed that one-dimensional GaN nanorods with [0001]-oriented single-crystalline wurtzite structures were grown on AL_2O_3 (0001) substrates by hydride vapor-phase epitaxy without a catalyst. The tip morphology of the GaN nanorods became flat with increasing temperature difference between the gas mixing and the substrate zones. The gas mixing temperature significantly affected the formation of the nanorods, and the substrate temperature influenced the morphology and the strain of the GaN nanorods near the GaN/Al_2O_3 heterointerface. The strain and the stress existing in the GaN layer near the heterointerface were decreased with increasing growth rate. The formation mechanisms of the GaN nanorods grown on the Al_2O_3 (0001) substrates are described on the basis of the experimental results.
机译：X射线衍射图谱，扫描电子显微镜图像和透射电子显微镜图像显示，具有[0001]取向单晶纤锌矿结构的一维GaN纳米棒通过氢化物气相外延生长在AL_2O_3（0001）衬底上，而没有氢键。催化剂。 GaN纳米棒的尖端形态随着气体混合和衬底区域之间温度差的增加而变得平坦。气体混合温度显着影响纳米棒的形成，并且衬底温度影响GaN / Al_2O_3异质界面附近的GaN纳米棒的形态和应变。随着生长速率的增加，异质界面附近的GaN层中存在的应变和应力减小。根据实验结果描述了在Al_2O_3（0001）衬底上生长的GaN纳米棒的形成机理。

著录项

  • 来源
    《Journal of Materials Research》 |2009年第8期|2476-2482|共7页
  • 作者

    Kyu Hyung Lee; Jeong Yong Lee; Young Hae Kwon; Tae Won Kang; Dong Hun Kim; Dea Uk Lee; Tae Whan Kim;

  • 作者单位

    Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea;

    Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea;

    Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea;

    Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea;

    Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea;

    Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea;

    Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号