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首页> 外文期刊>Journal of Materials Research >Controlled growth of highly aligned amorphous SiO_x sunflower-like morphology
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Controlled growth of highly aligned amorphous SiO_x sunflower-like morphology

机译：可控生长的高度对齐的无定形SiO_x向日葵状形态

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摘要

Highly aligned nanowire bundles were controllably fabricated through the reaction of Si with oxygen, using molten Ga and Au as catalysts. Scanning electron microscopy reveals that the bundles have the ability to self-assemble into various morphologies, a few of which, including one that strikingly resembles a sunflower, were not reported before. Examinations of the bundles by transmission electron microscopy show that they contain fine, amorphous SiO_x. nanowires, with x ranging from 1.2 to 1.5. In the sunflower-like morphology, highly packed bundles form the disc florets and loosely packed bundles around the rim of the disc form the ray florets. We have studied the conditions under which the sunflower-like morphology could be obtained and suggest a possible mechanism for its growth. Room-temperature cathodoluminescence spectra of the nanowire bundles show that they emit an intense broad-band light covering the entire visible range.
机译：通过使用熔融的Ga和Au作为催化剂，通过Si与氧的反应可控地制备高度对齐的纳米线束。扫描电子显微镜显示，这些束具有自组装成各种形态的能力，其中很少有报道，包括一个惊人地类似于向日葵的形态。通过透射电子显微镜检查束，表明它们包含细的无定形SiO_x。纳米线，x的范围为1.2到1.5。在向日葵状形态中，高度堆积的束形成盘状小花，而围绕盘状边缘的松散堆积的束形成射线小花。我们研究了可得到向日葵状形态的条件，并提出了其生长的可能机理。纳米线束的室温阴极发光光谱表明，它们发出覆盖整个可见光范围的强烈宽带光。

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