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CeO_2 insulating films for application to high-temperature superconducting digital devices

机译:用于高温超导数字设备的CeO_2绝缘膜

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摘要

CeO_2 thin films as insulating layers for high-temperature superconducting digital devices were studied. The dependence on substrate temperature and oxygen pressure of the surface morphology and crystallinity of CeO_2 thin films prepared by pulsed laser deposition were investigated. CeO_2 thin films with a flat and closely grained surface were obtained at a relatively low oxygen pressure of 3.6 Pa, whereas higher oxygen pressure led to CeO_2 thin films with a rough surface and columnar grains. The recovery of oxygen content in superconducting layers was examined for multilayer structures with CeO_2 thin films. Enough oxygen was supplied to the upper and lower superconducting layers when the multilayer was cooled slowly in 3 X 10~(-4) Pa oxygen pressure after deposition. Resistively shunted junction type I-V characteristics were confirmed for interface-engineered ramp-edge junctions in a multilayer structure including four superconducting layers with CeO_2 thin films.
机译:研究了CeO_2薄膜作为高温超导数字器件的绝缘层。研究了通过脉冲激光沉积制备的CeO_2薄膜的表面形貌和结晶度对衬底温度和氧气压力的依赖性。在相对较低的氧气压力为3.6 Pa的情况下,获得了具有平坦且颗粒状表面的CeO_2薄膜,而较高的氧气压力导致CeO_2薄膜具有粗糙的表面和柱状晶粒。对于具有CeO_2薄膜的多层结构,检查了超导层中氧含量的回收率。当沉积后,在3 X 10〜(-4)Pa的氧气压力下缓慢冷却多层时,将足够的氧气供应到上下超导层。在包括四个带有CeO_2薄膜的超导层的多层结构中,由界面工程设计的斜坡边缘结点被确认为电阻分流型I-V特性。

著录项

  • 来源
    《Journal of Materials Research》 |2006年第1期|p.263-269|共7页
  • 作者

    Ai Kamitani; H. Wakana; A. Ogawa;

  • 作者单位

    Superconductivity Research Laboratory-International Superconductivity Technology Center (SRL-ISTEC), Koto-ku, Tokyo 135-0062, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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