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首页> 外文期刊>Journal of Materials Research >Structural development and electronic properties of hot filament low pressure chemical vapor deposited fluorocarbon polymer films
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Structural development and electronic properties of hot filament low pressure chemical vapor deposited fluorocarbon polymer films

机译：热丝低压化学气相沉积碳氟聚合物薄膜的结构发展和电子性能

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摘要

Fluorocarbon polymer films in the poly(tetrafluoroethylene) (PTFE)-like structure are formed by a low-pressure chemical vapor deposition technique using the hot filament excitation of the gaseous C_3F_6O precursor. The filament and substrate temperatures were found to influence the structure of the deposited films. Infrared absorption and electron spectroscopy studies reveal that a PTFE-like (CF_2)_(2n) linear molecular chain structure evolves by an adsorption driven nucleation and CF_2 polymerization process in the films deposited with low (450 deg C) filament and high (70 deg C) substrate temperatures. The films formed at a low substrate temperature (-165 deg C) show a higher concentration of CF and C-CF bond defects and shorter (CF_2)_(2n) chains. A high (8-10 at. percent) oxygen concentration in the films deposited at 600 deg C filament temperature is attributed to the reaction of the (CF_2)_(2n) chains with COF and peroxyradicals arising from the dissociation of CF_3C(O)F and affects the thermal stability of the films. Such reactions are not involved in the film growth at a low (450 deg C) filament temperature. These films have much lower (<2 at. percent) bonded oxygen content. The films having an ordered (CF_2)_(2n) chain structure formed at 70 deg C are characterized by low leakage currents approx 7 X 10~(-11) A cm~(-2) at 0.1 MV cm~(-1) field. In comparison, high leakage currents approx 1 X 10~(-8) A cm~(-2) are observed for the films having a higher concentration of C-F and C-CF bonds.
机译：通过使用气态C_3F_6O前体的热灯丝激发，通过低压化学气相沉积技术形成聚四氟乙烯（PTFE）类结构的氟碳聚合物薄膜。发现灯丝和基材的温度影响沉积膜的结构。红外吸收和电子光谱研究表明，在低（450℃）长丝和高（70℃）长丝沉积的薄膜中，通过吸附驱动的成核作用和CF_2聚合过程，形成了类PTFE的（CF_2）_（2n）线性分子链结构。 C）基板温度。在较低的基板温度（-165摄氏度）下形成的膜表现出较高的CF和C-CF键缺陷浓度，以及较短的（CF_2）_（2n）链。在600摄氏度的灯丝温度下沉积的薄膜中高（8-10 at。％）的氧气浓度归因于（CF_2）_（2n）链与COF和CF_3C（O）的离解引起的过氧自由基的反应F并影响薄膜的热稳定性。在低（450摄氏度）长丝温度下，此类反应不参与膜的生长。这些薄膜的键合氧含量低得多（<2 at。％）。在70摄氏度下形成具有规则（CF_2）_（2n）链结构的薄膜，其特征是在0.1 MV cm〜（-1）时低漏电流约为7 X 10〜（-11）A cm〜（-2）。领域。相比之下，对于具有较高浓度的C-F和C-CF键的薄膜，观察到高泄漏电流约1 X 10〜（-8）cm〜（-2）。

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  • 来源
    《Journal of Materials Research》 |2006年第1期|p.242-254|共13页
  • 作者

    A.C. Rastogi; S.B. Desu;

  • 作者单位

    Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
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