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首页> 外文期刊>Journal of Materials Research >Effect of electromigration on mechanical shear behavior of flip chip solder joints
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Effect of electromigration on mechanical shear behavior of flip chip solder joints

机译：电迁移对倒装芯片焊点机械剪切性能的影响

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摘要

Effect of electromigration on mechanical shear behavior of flip chip solder joints consisting of 97Pb3Sn and 37Pb63Sn composite solder joints was studied. The under bump metallurgy (UBM) on the chip side was TiW/Cu/electroplated Cu, and the bond pad on the board side was electroless Ni/Au. It was found that the mode of shear failure has changed after electromigration and the mode depends on the direction of electron flow during electromigration. The shear induced fracture occurs in the bulk of 97Pb3Sn solder without current stressing, however, after 10 h current stressing at 2.55 X 10~4 A/cm~2 at 140 deg C, it occurs alternately at the cathode interfaces between solder and intermetallic compounds (IMCs). In the downward electron flow, from the chip to substrate, the failure site was at the Cu-Sn IMC/solder interface near the Si chip. However, in the upward electron flow, from the substrate to chip, failure occurred at the Ni-Sn IMC/solder interface near the substrate. The failure mode has a strong correlation to microstructural change in the solder joint. During the electromigration, while Pb atoms moved to the anode side in the same direction as with the electron flow, Sn atoms diffused to the cathode side, opposite the electron flow. In addition, electromigration dissolves and drives Cu or Ni atoms from UBM or bond pad at the cathode side into the solder. These reactions resulted in the large growth of Sn-based IMC at the cathode sides. Therefore, mechanical shear failure occurs predominantly at the cathode interface.
机译：研究了电迁移对包括97Pb3Sn和37Pb63Sn复合焊点的倒装芯片焊点的机械剪切行为的影响。芯片侧的凸点下冶金（UBM）为TiW / Cu /电镀Cu，板侧的焊盘为化学镀Ni / Au。发现在电迁移之后剪切破坏的模式已经改变，并且该模式取决于电迁移期间电子流动的方向。剪切引起的断裂发生在大部分没有电流应力的97Pb3Sn焊料中，但是，在140摄氏度，2.55 X 10〜4 A / cm〜2的电流应力下10 h后，它交替发生在焊料和金属间化合物的阴极界面上（IMC）。在从芯片到基板的向下电子流中，失效点位于Si芯片附近的Cu-Sn IMC /焊料界面。但是，在从衬底到芯片的向上电子流中，在衬底附近的Ni-Sn IMC /焊料界面处发生了故障。失效模式与焊点的微观结构变化密切相关。在电迁移过程中，当Pb原子以与电子流相同的方向移至阳极侧时，Sn原子向电子流的相反方向扩散至阴极侧。另外，电迁移会溶解并驱动铜或镍原子从阴极侧的UBM或键合焊盘进入焊料。这些反应导致阴极侧的Sn基IMC大量增长。因此，机械剪切破坏主要发生在阴极界面。

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  • 来源
    《Journal of Materials Research》 |2006年第3期|p.698-702|共5页
  • 作者

    Jae-Woong Nah; Fei Ren; Kyung-Wook Paik;

  • 作者单位

    Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, California 90095-1595;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
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