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首页> 外文期刊>Journal of Materials Research >Solution-processed lanthanum zirconium oxide as a barrier layer for high I_c-coated conductors
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Solution-processed lanthanum zirconium oxide as a barrier layer for high I_c-coated conductors

机译：固溶处理的氧化锆锆镧作为高I_c涂层导体的阻挡层

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High-quality -lanthanum zirconium oxide (La_2Zr_2O_7 or LZO) films have been deposited and processed on Ni-W substrates using a sol-gel processing approach. It has been demonstrated that crack-free coatings with thicknesses up to 100 nm can be processed in a single step, while thicker coatings (200-225 nm) were processed using a multiple coating and annealing process. Using simulated metalorganic deposition (MOD)-Yba_2Cu_3O_(7_delta) (YBCO) processing conditions, the barrier properties of the sol-gel LZO coating with a thickness of 120 nm were found to be comparable to that of the standard 3-layer buffer stack deposited using physical vapor deposition. Secondary ion mass spectroscopy depth profile analysis of LZO films annealed in oxygen-18 shows that LZO effectively stops the diffusion of Ni within the first 80-100 nm. Using MOD processes, a CeO_2 cap layer and superconducting YBCO layer were deposited on sol-gel LZO/Ni-W. For the first time, using such an all-solution conductor architecture, a critical current (J_c) of 140 A/cm with a corresponding critical current density (J_c) of 1.75 MA/cm~2 has been demonstrated. Using a very thin Y_2O_3 seed layer (-10 nm) deposited by electron beam evaporation; improved texture quality in the LZO layers has been demonstrated. The performance of the LZO deposited on these samples was evaluated using a sputtered CeO_2 cap layer and MOD YBCO layer. Critical currents of up to 255 A/cm (3.2 MA/cm~2) with 0.8-mum-thick YBCO films have been demonstrated, comparable to the performance of films grown using physical vapor deposited yttria stabilized zirconia as a barrier layer. Similar experiments using an MOD-CeO_2 cap layer and MOD-YBCO layer yielded critical currents of 200 A/cm (2.5 MA/cm~2) with 0.8-mum-thick YBCO films.
机译：高质量的氧化锆镧（La_2Zr_2O_7或LZO）膜已沉积并使用溶胶-凝胶工艺在Ni-W基板上进行了加工。已经证明，厚度高达100 nm的无裂纹涂层可以在一个步骤中进行处理，而较厚的涂层（200-225 nm）可以使用多次涂覆和退火工艺进行处理。使用模拟的金属有机沉积（MOD）-Yba_2Cu_3O_（7_delta）（YBCO）处理条件，发现厚度为120 nm的溶胶-凝胶LZO涂层的阻隔性能可与标准的三层缓冲叠层的阻隔性能相比使用物理气相沉积。在氧气18中退火的LZO膜的二次离子质谱深度分布分析表明，LZO有效地阻止了Ni在前80-100 nm内的扩散。使用MOD工艺，将CeO_2盖层和超导YBCO层沉积在溶胶-凝胶LZO / Ni-W上。首次使用这种全解决方案的导体架构，已证明140 A / cm的临界电流（J_c）和1.75 MA / cm〜2的相应临界电流密度（J_c）。使用通过电子束蒸发沉积的非常薄的Y_2O_3种子层（-10 nm）； LZO层的纹理质量得到了改善。使用溅射的CeO_2盖层和MOD YBCO层评估了沉积在这些样品上的LZO的性能。已经证明，使用0.8微米厚的YBCO膜时，临界电流高达255 A / cm（3.2 MA / cm〜2），与使用物理气相沉积氧化钇稳定的氧化锆作为阻挡层生长的膜的性能相当。使用MOD-CeO_2盖层和MOD-YBCO层进行的类似实验在0.8微米厚的YBCO膜上产生了200 A / cm（2.5 MA / cm〜2）的临界电流。

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