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首页> 外文期刊>Journal of Materials Research >Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures
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Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures

机译：GaAsP / GaP纳米线异质结构中的逐层和逐步流动生长机制

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摘要

GaP-GaAsP segmented nanowires (NWs), with diameters ranging between 20 and 500 nm and lengths between 0.5 and 2 mu m, were catalytically grown from Au particles on a GaAs (111)B substrate in a gas source molecular beam epitaxy system. The morphology of the NWs was either pencil-shaped with a tapered tip or rod-shaped with a constant diameter along the entire length. Stacking faults were observed for most NWs with diameters greater than 30 nm, but thinner ones tended to exhibit fewer defects. Moreover, stacking faults were more likely found in GaAsP than in GaP. The composition of the pencil NWs exhibited a core-shell structure at the interface region, and rod-shaped NWs resulted in planar and atomically abrupt heterointerfaces. A detailed growth mechanism is presented based on a layer-by-layer growth mode for the rod-shaped NWs and a step-flow growth mode for the tapered region of the pencil NWs.
机译：在气体源分子束外延系统中，在GaAs（111）B衬底上从Au颗粒催化生长直径在20到500 nm之间，长度在0.5到2μm之间的GaP-GaAsP分段纳米线（NWs）。 NW的形态为带锥形尖端的铅笔形或沿整个长度具有恒定直径的杆形。对于大多数直径大于30 nm的NW，观察到堆垛层错，但较薄的NW往往表现出较少的缺陷。而且，在GaAsP中比在GaP中更容易发现堆叠缺陷。铅笔状NW的组成在界面区域显示出核-壳结构，而棒状NW则导致了平面和原子突变的异质界面。基于棒状净水的逐层生长模式和铅笔净水的锥形区域的逐步流动生长模式，给出了详细的生长机理。

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  • 来源
    《Journal of Materials Research》 |2006年第11期|p.2801-2809|共9页
  • 作者

    C. Chen; M.C. Plante; C. Fradin;

  • 作者单位

    Centre for Emerging Device Technologies, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
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