Improvement in the crystallinity and electrical properties in Hg_(1-x)Cd_xTe epilayers utilizing CdTe buffer layers grown on GaAs substrates by a two-step annealing process

Y.S. Ryu; B.S. Song; H.J. Kim; T.W. Kang; T.W. Kim

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Improvement in the crystallinity and electrical properties in Hg_(1-x)Cd_xTe epilayers utilizing CdTe buffer layers grown on GaAs substrates by a two-step annealing process

机译：利用通过两步退火工艺在GaAs衬底上生长的CdTe缓冲层提高Hg_（1-x）Cd_xTe外延层的结晶度和电性能

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High-quality Hg_(1-x)Cd_xTe epilayers on CdTe buffer layers were grown by molecular beam epitaxy using various growth methods. The reflection high-energy electron diffraction, scanning electron microscopy, and atomic force microscopy measurements showed that the crystallinity and electrical properties of the Hg_(1-x)Cd_xTe epilayers grown on CdTe buffer layers deposited by using a two-step annealing growth method were improved. These results indicate that high-quality Hg_(1-x)Cd_xTe films can be obtained by using CdTe buffer layers grown by the two-step annealing growth method and that the grown Hg_(1-x)Cd_xTe epilayers hold promise for potential applications in optoelectronic devices in the area of infrared detectors.

机译：使用各种生长方法，通过分子束外延生长在CdTe缓冲层上的高质量Hg_（1-x）Cd_xTe外延层。反射高能电子衍射，扫描电子显微镜和原子力显微镜测量结果表明，通过两步退火生长方法在CdTe缓冲层上生长的Hg_（1-x）Cd_xTe外延层的结晶度和电学性质为：改善。这些结果表明，使用通过两步退火生长方法生长的CdTe缓冲层可以得到高质量的Hg_（1-x）Cd_xTe膜，并且所生长的Hg_（1-x）Cd_xTe外延层具有潜在的应用前景。红外探测器领域中的光电设备。

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来源
《Journal of Materials Research》 |2003年第2期|p.257-261|共5页
作者
Y.S. Ryu; B.S. Song; H.J. Kim; T.W. Kang; T.W. Kim;
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作者单位

Department of Physics and Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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2. Electrical characteristics of Hg_(1-x)Cd_xTe (x= 0.1 to 0.8) grown on GaAs (100) by an inter diffused multilayer process [J] . M. Faith, P. W. Leech, C. Frost Journal of Materials Science Letters . 1995,第3期

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Improvement in the crystallinity and electrical properties in Hg_(1-x)Cd_xTe epilayers utilizing CdTe buffer layers grown on GaAs substrates by a two-step annealing process

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