Synthesis of nanocrystalline aluminum-gallium nitride (A1(x)Ga(1-x)N; x=0.1 to 0.5) with oxide precursors via ammonolysis

Faulhaber S.; Loeffler L.; Hu J.; Kroke E.; Riedel R.; Lange FF.

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Synthesis of nanocrystalline aluminum-gallium nitride (A1(x)Ga(1-x)N; x=0.1 to 0.5) with oxide precursors via ammonolysis

机译：通过氨解与氧化物前驱体合成纳米晶铝氮化铝（A1（x）Ga（1-x）N; x = 0.1至0.5）

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Oxygen-containing precursor systems for the synthesis of mixed aluminum-gallium nitride (AlxGa1-xN with x = 0.1 to 0.5) through ammonolysis (heat treatment under ammonia) were evaluated. Three different precursor systems were studied: (i) aluminum isopropoxide (aluminum sec-butoxide)/gallium isopropoxide hydrolyzed with excess water and cross-linked with 1,6-hexanediol, (ii) aluminum-gallium hydroxide coprecipitated from aluminum-gallium nitrate solution, and (iii) spray-dried aluminum-gallium nitrate solutions. The specimens were heat-treated between 700 degreesC and 1100 degreesC and were characterized mainly by x-ray diffraction, nuclear magnetic resonance (NMR), and transmission electron microscopy (TEM). NMR was used to follow the conversion of oxygen to nitrogen bonds. TEM in combination with energy-dispersive x-ray spectroscopy was used to determine the solid-solution composition for separated particles. It is possible to synthesize a mixed hexagonal (AI,Ga)N with crystallite sizes in the range of similar to10 nm from all three precursor systems, but all products contained larger GaN crystals ranging from 20 nm (alkoxide-derived) to 200 nm (hydroxide-detived) and a fraction of untransformed Al-O bonds; e.g., (amorphous or gamma-phase) Al2O3. [References: 26]

机译：评估了通过氨解（氨气热处理）合成氮化铝镓铝（AlxGa1-xN，x = 0.1至0.5）的含氧前驱体体系。研究了三种不同的前体系统：（i）异丙醇铝（仲丁醇铝）/异丙醇镓用过量水水解并与1,6-己二醇交联；（ii）铝-氢氧化镓从硝酸铝-镓溶液中共沉淀；以及（iii）喷雾干燥的硝酸铝镓溶液。样品在700℃至1100℃之间进行了热处理，主要通过X射线衍射，核磁共振（NMR）和透射电子显微镜（TEM）进行表征。 NMR用于追踪氧到氮键的转化。 TEM与能量色散X射线光谱法结合使用来确定分离出的颗粒的固溶体组成。可以从所有三个前体系统中合成微晶尺寸在大约10 nm范围内的混合六方（Al，Ga）N晶体，但是所有产品均包含从20 nm（烷氧化物衍生）到200 nm（氢氧化物）和一部分未转化的Al-O键;例如（无定形或γ相）Al2O3。 [参考：26]

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来源
《Journal of Materials Research》 |2003年第10期|p. 2350-2358|共9页
作者
Faulhaber S.; Loeffler L.; Hu J.; Kroke E.; Riedel R.; Lange FF.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
Nuclear-magnetic-resonance; Group-iii nitrides; Ga-71 nmr; Growth; Al-27; Powders; Ammonia; Mocvd; Gan;

机译：核磁共振;Ⅲ族氮化物;Ga-71 nmr;生长;Al-27;粉末;氨;Mocvd;甘;

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Synthesis of nanocrystalline aluminum-gallium nitride (A1(x)Ga(1-x)N; x=0.1 to 0.5) with oxide precursors via ammonolysis

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