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Properties and Use of In0.5(Al(x)Ga(1-x))0.5P and Al(x)Ga(1-x)As Native Oxides inHeterostructure Lasers

机译：In0.5（al（x）Ga（1-x））0.5p和al（x）Ga（1-x）作为异质结构激光器中的天然氧化物的性质和用途

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Data are presented demonstrating the formation of native oxides from high Al

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作者
Kish, F. A.; Caracci, S. J.; Holonyak, N.; Hsieh, K. C.; Baker, J. E.;
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年度 1992
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总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Oxides; Semiconductor lasers; Annealing; Crystals; Electron microscopy; Fabrication; Interfaces; Mass spectrometry; Oxidation; Semiconductors; Stripes; Temperature; Semiconductor diodes; Heterojunctions; Dielectric properties; Electron mobility; Physical;

机译：氧化物;半导体激光器;退火;晶体;电子显微镜;制造;界面;质谱;氧化;半导体;条纹;温度;半导体二极管;异质结;介电特性;电子迁移率;物理;

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专利

1. Dependently addressable dual-spot native-oxide-confined GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well lasers [J] . Sun D., Treat W. IEEE Photonics Technology Letters . 1998,第9期

机译：可靠可寻址的双点自然氧化物限制的GaInP-（Al / sub x / Ga / sub 1-x /）/ sub 0.5 / In / sub 0.5 / P量子阱激光器
2. Characteristics of native-oxide-confined InGaP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well ridge waveguide lasers [J] . Decai Sun, Treat D.W. IEEE Photonics Technology Letters . 1998,第4期

机译：天然氧化物限制的InGaP-（Al / sub x / Ga / sub 1-x /）/ sub 0.5 / In / sub 0.5 / P量子阱脊波导激光器的特性
3. DESORDRE STRUCTURAL ET SON EFFET SUR LES LONGUEURS D'ONDES LASER DU SUPERRESEAU GaAs-Al_xGa_(1-x)As STRUCTURAL DISORDER AND ITS EFFECT IN LASER WAVELENGHT GaAs-Al_xGa_(1-x)As SUPERLATTICE [J] . R. DJELTI, S. BENTATA, Z. AZIZ, Fizika: A journal of experimental and theoretical physics, A. atomic and molecular physics condensed matter physics plasma physics . 2009,第1a4期

机译：GaAs-Al_xGa_（1-x）作为超晶格的激光激光中的结构紊乱及其作用GaAs-Al_xGa_（1-x）作为超晶格的激光激光的结构紊乱及其作用
4. (Al{sub}xGa{sub}(1-x)){sub}0.5In{sub}0.5P barrier layer grown by gas source molecular beam epitaxy for V-band (Al{sub}xGa{sub}(1-x)){sub}0.5In{sub}0.5P/In{sub}0.2Ga{sub}0.8As/GaAs power pseudomorphic HEMT [C] . M. Zaknoune, O. Schuler, X. Wallart, International Conference on Indium Phosphide and Related Materials . 2000

机译：（Al {sub} xga {sub}（1-x））{sub} 0.5英寸{sub}由气源分子束外延生长的V波段（Al {sub} {sub}）生长（1- x））{sub} 0.5in {sub} 0.5p / in {sub} 0.2ga {sub} 0.8as / gaas power pseudomorphic hemt
5. TIME RESOLVED SPECTROSCOPY OF TERNARY SEMICONDUCTORS GALLIUM(X)-INDIUM(1-X) PHOSPHIDE AND GALLIUM-ARSENIDE(1-X)-PHOSPHIDE(X) UNDER PICOSECOND LASER PULSE EXCITATION. [D] . ZARRABI, HASSAN J. 1985

机译：激光脉冲激发下三元半导体镓（X）-铟（1-X）磷和砷化镓（1-X）-磷（X）的时间分辨光谱。
6. Differences in the Physical Properties of Native and Partially Degraded Phytochrome as Probed by Their Differential Sensitivity to Permanganate Oxidation [O] . Orna Baron, Bernard L. Epel 1983

机译：天然和部分降解的植物色素对高锰酸盐氧化的敏感性不同其物理性质上的差异
7. Contactless Electroreflectance Spectroscopy of In0.5(Ga1-xAlx)0.5P/GaAs Double Heterostructures [O] . Jeong-Hwa Kim, Hyun-Jun Jo, In-Ho Bae 2010

机译：In0.5（GA1-XALX）0.5p / gaas双异质结构的非接触式电气反射光谱
8. Native-Oxide Defined In0.5(AlxGa(1-x))0.5P Quantum Well Heterostructure WindowLasers (660 nm) [R] . Maranowski, S. A., Kish, F. A., Caracci, S. J., 1992

机译：原生氧化物定义In0.5（alxGa（1-x））0.5p量子阱异质结构WindowLasers（660 nm）

Properties and Use of In0.5(Al(x)Ga(1-x))0.5P and Al(x)Ga(1-x)As Native Oxides inHeterostructure Lasers

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