Correlation of resistance and interfacial reaction of contacts to n-type InP

J. S. Huang; C. B. Vartuli; T. Nguyen

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Correlation of resistance and interfacial reaction of contacts to n-type InP

机译：接触点与n型InP的电阻和界面反应的相关性

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Metal contact of compound semiconductors has been extensively studied using various characterization tools. However, there was little work of scanning transmission electron microscopy (STEM) done previously for the study of the InP contact systems. Using STEM and Auger electron spectroscopy analyses, we correlated the resistance with Interfacial reactions in the AuGe/Ni/Au/Cr/Au contacts to n-InP. Detailed nanoscale Structural and chemical information was uniquely revealed by the STEM compared to Other techniques.

机译：已经使用各种表征工具对化合物半导体的金属接触进行了广泛的研究。但是，以前对于InP接触系统的研究很少有扫描透射电子显微镜（STEM）的工作。使用STEM和俄歇电子能谱分析，我们将电阻与AuGe / Ni / Au / Cr / Au触点与n-InP的界面反应相关联。与其他技术相比，STEM独特地揭示了详细的纳米级结构和化学信息。

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《Journal of Materials Research》 |2002年第11期|p.2929-2934|共6页
作者
J. S. Huang; C. B. Vartuli; T. Nguyen;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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Correlation of resistance and interfacial reaction of contacts to n-type InP

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