Defect clustering in GaN irradiated with O+ ions

C. M. Wang; W. Jiang; W. J. Weber

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Defect clustering in GaN irradiated with O+ ions

机译：O +离子辐照的GaN中的缺陷聚集

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Transmission electron microscopy (TEM) was used to study microstructures formed in GaN irradiated with 600-keV O+ ions at room temperature. Three types of defect Clusters were identified in the irradiated GaN: (I) basal-plane stacking faults with Dimensions ranging from 5 to 30 nm, (ii) pyramidal dislocation loops, and (iii) local Regions of highly disordered material. High-resolution TEM imaging clearly revealed That one type of the basal-plane stacking faults corresponded to insertion of one extra Ga-N basal plane in the otherwise perfect GaN lattice.

机译：透射电子显微镜（TEM）用于研究在室温下用600-keV O +离子辐照的GaN中形成的微观结构。在被辐照的GaN中发现了三种类型的缺陷簇：（I）尺寸在5到30 nm之间的基面堆叠断层，（ii）金字塔状位错环，以及（iii）高无序材料的局部区域。高分辨率TEM成像清楚地表明，一种类型的基面堆叠缺陷对应于在另外理想的GaN晶格中插入一个额外的Ga-N基面。

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《Journal of Materials Research》 |2002年第11期|p.2945-2952|共8页
作者
C. M. Wang; W. Jiang; W. J. Weber;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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机译：单分子离子辐照缺陷团簇对GaN光学性能的影响
3. Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation [J] . M. W. Ullah, A. Kuronen, K. Nordlund, Journal of Applied Physics . 2013,第18期

机译：单分子离子辐照缺陷团簇对GaN光学性能的影响
4. Defects in Electron and Neutron Irradiated n-GaN: Disordered Regions Versus Point Defects [C] . Alexander Y Polyakov, Nikolai B. Smirnov, Anatoliy V. Govorkov, Materials Research Society Symposium on Advances in III-V Nitride Semiconductor Materials and Devices . 2006

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Defect clustering in GaN irradiated with O+ ions

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