Piezoresistivity in ruthenium-based metal-insulator- metal structures

Ahmed Amin

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Piezoresistivity in ruthenium-based metal-insulator- metal structures

机译：钌基金属-绝缘体-金属结构中的压阻

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The resistance change with applied stress was measured for ruthenium-based metal-insulator-metal thick films under tensile and hydrostatic pressures over the temperature range - 25 to +135 deg. C. the derived longitudinal, transverse, and hydrostatic piezoresistivity coefficients were corrected for elastic effects to yield the corresponding piezoresistivity coefficients and their temperature dependencies.

机译：在25至+135度的温度范围内的拉伸和静水压力下，测量了钌基金属-绝缘体-金属厚膜在施加应力时的电阻变化。 C.对得到的纵向，横向和静水压阻系数进行弹性校正，以产生相应的压阻系数及其温度依赖性。

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《Journal of Materials Research》 |2001年第8期|p.2239-2243|共5页
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Ahmed Amin;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
中图分类工程材料学;
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Piezoresistivity in ruthenium-based metal-insulator- metal structures

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