Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 deg. C

Sherif Sedky; Ann Witvrouw; Annelies Saerens

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Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 deg. C

机译：原位硼掺杂对400°C化学气相沉积硅锗薄膜性能的影响。 C

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This paper reports on the role of boron in situ doping on enhancing crystallization of silicon germanium deposited at 400 deg. C and 2 torr. The dependence of growth rate on germanium content and boron concentration is investigated. The minimum boron concentration and the minimum germanium content required for crystallizing the as-grown layers is experimentally determined.

机译：本文报道了硼原位掺杂对增强400度沉积的锗硅结晶的作用。 C和2托。研究了生长速率对锗含量和硼浓度的依赖性。通过实验确定结晶生长层所需的最小硼浓度和最小锗含量。

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《Journal of Materials Research》 |2001年第9期|p.2607-2612|共6页
作者
Sherif Sedky; Ann Witvrouw; Annelies Saerens;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 deg. C

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