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首页> 外文期刊>Journal of Materials Research >Domain structure and electrical properties of highly textured PbZr_xTi_1-x,O_3 thin films grown on LaNiO_3-electrode-buffered Si by metalorganic chemical vapor deposition
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Domain structure and electrical properties of highly textured PbZr_xTi_1-x,O_3 thin films grown on LaNiO_3-electrode-buffered Si by metalorganic chemical vapor deposition

机译：通过金属有机化学气相沉积在LaNiO_3电极缓冲的Si上生长的高织构PbZr_xTi_1-x，O_3薄膜的畴结构和电性能

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摘要

Thin films of highly (100) textured fine-grain (lateral grain size ≌ 0.l to 0.l5 pm) PbZr_xTi_1-xO_3, (PZT) (x = 0 to 0.7) were grown on conductive perovskite LaNiO_3-buffered platinized Si substrates by metalorganic chemical vapor deposition. Domain configuration and crystalline orientation were studied using x-ray diffraction and transmission electron microscopy. The predominant domain boundaries of Ti-rich tetragonal-phase PZT and Zr-rich rhombohedral-phase PZT were found to be on the (ll0) planes and (l00) planes, respectively. The equilibrium domain widths were observed and estimated numerically on the basis of transformation strain, grain size, and domain boundary energy. The peak value of the dielectric constant was 790 near the morphotropic boundary. Hysteresis behavior of these PZT thin films was demonstrated. A decrease in coercive field with the increment of Zr content was found; this variation was attributed to domain density and the multiplicity of polarization axes. Furthermore, the low leakage current (J ≤ 5 x 10~-7 A/cm~2 at V = 4 V) was observed for all samples, and the involvement of several possible conduction mechanisms was suggested.
机译：在导电钙钛矿LaNiO_3缓冲镀铂Si衬底上生长高度（100）纹理细晶粒（横向晶粒度≌0.l至0.15 pm）PbZr_xTi_1-xO_3，（PZT）（x = 0至0.7）的薄膜通过金属有机化学气相沉积。使用X射线衍射和透射电子显微镜研究了域构型和晶体取向。富钛的四方相PZT和富锆的菱面体相PZT的主要域边界分别位于（110）平面和（100）平面上。在相变应变，晶粒尺寸和畴边界能的基础上，观察并估算了平衡畴的宽度。介晶边界附近的介电常数的峰值为790。证明了这些PZT薄膜的磁滞行为。随着Zr含量的增加，矫顽场减小。这种变化归因于畴密度和极化轴的多样性。此外，在所有样品中均观察到低泄漏电流（在V = 4 V时为J≤5 x 10〜-7 A / cm〜2），并暗示了几种可能的导电机理。

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